Anisotropic Carrier Transport in CH₃NH₃PbI₃ Single Crystal Field-Effect Transistor

Organic‐Inorganic Hybrid Perovskite Nanomaterials: Synthesis and Application

“…At present, hybrid perovskite materials mainly include polycrystals, [21,22] single crystals, [23,24] and nanomaterials. [25] Polycrystalline hybrid perovskite is the most traditional type of hybrid perovskite materials.…”

Ambipolar Field‐Effect Transistor Based on CH3NH3PbI3 Microwires

“…The reported FET mobilities of CH 3 NH 3 PbI 3 distributed in a very large variation range from 10 À 6 to 10 3 cm 2 V À 1 s À 1 depending on the morphology of CH 3 NH 3 PbI 3 , device structure, electrodes, dielectric material, and external conditions (temperature, light radiation, atmosphere), etc. [8][9][10][11][12][13][14][15][16][17] Generally, relatively high FET mobility is obtained at low temperature and under light illumination. While, at room temperature and in the dark, the FET mobility is very low or even indistinguishable.…”

“…[8][9][10][11][12][13][14][15][16][17] As to CH 3 NH 3 PbI 3 microplates based FET, to achieve relatively better performance, cumbersome two-step growth method and dry-transfer technique are needed, [17] which is not suitable for industrial production; FETs based on CH 3 NH 3 PbI 3 polycrystalline films are relatively easy to fabricate, but they have no obvious field effect at room temperature and in the dark and air; [18] CH 3 NH 3 PbI 3 single crystals usually show more obvious field effect than their polycrystalline film counterparts because the single crystals have perfect structural order and have no grain boundaries thereby greatly reducing the concentration of charge traps, but the field effect is restricted by the excessive thickness of the single crystal and the thinning of single crystal for FET is laborious. [13,16] To continue advancing CH 3 NH 3 PbI 3 based FETs especially promoting the FET performance at room temperature and in the dark and air, herein, we demonstrate top-contact, bottomgate FETs based on CH 3 NH 3 PbI 3 microwires for the first time. The CH 3 NH 3 PbI 3 microwires were prepared from CH 3 NH 3 PbI 3 single crystals and the advantages of single crystals are retained to some extent.…”

“…No obvious saturation characteristic is observed in output curves of the two kinds of FETs, which is similar to that in CH 3 NH 3 PbI 3 single crystal based FETs. [13,16] The field-effect mobility (μ) was calculated through the slope in the linear region in the transfer curves (Figures 3c, 3d, 4c and 4d) by using the following equation:…”

“…The grain boundary always gives rise to a large concentration of traps or ion vacancies and makes the screen effect remarkable. [8,16] Fewer grain boundary means faster carrier migration. In contrast, for the FETs based on CH 3 NH 3 PbI 3 microwires positioned perpendicular to the channel direction, the corresponding μ e and μ h are lower than that measured from devices with microwire direction parallel to the channel direction.…”