Anisotropic ferromagnetism in Fe
                x
            Sn1−x
            O2 nanostructure arrays

Chen, Shutian; Li, Zhengcao; Zhang, Zhengjun

doi:10.1007/s10853-017-1804-0

Cited by 13 publications

(14 citation statements)

References 27 publications

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“…The highest power factor reached ≈ 17 µW cm −1 K −2 at 623 K for Mg 3.2 Sb 1.5 Bi 0.49 Se 0.01 , almost twice of that of previously reported Mg 3.07 Sb 1.5 Bi 0.48 Se 0.02 . Figure d shows the comparison of power factor for n‐type Te‐, Se‐, S‐doped and p‐type Li‐, Na‐, Ag‐doped Mg 3 Sb 2 ‐based TE materials . It is obvious that the n‐type Mg 3 Sb 2 ‐based materials, especially Te‐ and Se‐doped samples, possess much higher power factor than those of p‐type materials.…”

Section: Resultsmentioning

confidence: 61%

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

Zhang

Chen

Yao

et al. 2019

Adv Funct Materials

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Se-doped Mg 3.2 Sb 1.5 Bi 0.5 -based thermoelectric materials are revisited in this study. An increased ZT value ≈1.4 at about 723 K is obtained in Mg 3.2 Sb 1.5 Bi 0.49 Se 0.01 with optimized carrier concentration ≈1.9 × 10 19 cm −3 . Based on this composition, Co and Mn are incorporated for the manipulation of the carrier scattering mechanism, which are beneficial to the dramatically enhanced electrical conductivity and power factor around room temperature range. Combined with the lowered lattice thermal conductivity due to the introduction of effective phonon scattering centers in Se&Mn-codoped sample, a highest room temperature ZT value ≈0.63 and a peak ZT value ≈1.70 at 623 K are achieved for Mg 3.15 Mn 0.05 Sb 1.5 Bi 0.49 Se 0.01 , leading to a high average ZT ≈1.33 from 323 to 673 K. In particular, a remarkable average ZT ≈1.18 between the temperature of 323 and 523 K is achieved, suggesting the competitive substitution for the commercialized n-type Bi 2 Te 3 -based thermoelectric materials.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201906143. helps to promote the utilization of energy for the sustainable development. [1][2][3][4][5][6][7] The conversion efficiency of TE materials is determined by the dimensionless figureof-merit ZT = σS 2 T/κ, where σ is the electrical conductivity, S is the Seebeck coefficient, T is the absolute temperature, and κ is the thermal conductivity. High TE performance needs high electrical conductivity, high Seebeck coefficient, and low thermal conductivity. However, it is hard to independently optimize them because they are interconnected. [8][9][10][11][12][13][14] Zintl compounds have complex crystal structure desired for high TE performance. [15,16] The anions provide the "electron-crystal" structure through the covalent bonding network, and Zintl cations play the role of the "phonon scattering center" for extremely low lattice thermal conductivity. [5,[17][18][19] Most of Zintl phases are intrinsically p-type and difficult to be doped to n-type semiconductors. While Mg 3 Sb 2 -based Zintl-phase materials show outstanding n-type TE performance by chalcogens or rare earth doping. [20][21][22] The maximum peak ZT value of Te-doped Mg 3+δ Sb 1.5 Bi 0.5 is higher than ≈1.5 at 723 K. [21][22][23][24][25][26] Especially, a prominent average ZT value has recently been obtained at around room temperature range, which is close to that of the commercialized Bi 2 Te 3 -based TE material. Considering the scarcity of Te, Mg 3 Sb 2 -based materials are more promising for large-scale applications. The high performance at lower temperature is considered the results of the enhanced carrier mobility, which is ascribed to the Sb/Bi alloying for band structure tailoring [27][28][29] and transition metal doping (Nb, Ta, Co, Mn, Hf, etc.) or grain size increment for scattering mechanism manipulation. [24,25,[30][31][32][33][34] The average ZT ≈ 1.05 was obtained for Mn&Te-codoped Mg 3+δ Sb 1.5 Bi 0.5[35] and ≈1.08 was obt...

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Section: Resultsmentioning

confidence: 61%

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

Zhang

Chen

Yao

et al. 2019

Adv Funct Materials

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“…[ 20 ] Presumably because all previous (polycrystalline) samples still show some increasing trend of electrical conductivity with temperature below room temperature, many recent reports still claim the predominance of ionized impurity scattering at low temperature. [ 3,6,23–25,31–35 ]…”

Section: Figurementioning

confidence: 99%

Metallic n‐Type Mg₃Sb₂ Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

et al. 2020

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Mg3(Sb,Bi)2 alloys have recently been discovered as a competitive alternative to the state‐of‐the‐art n‐type Bi2(Te,Se)3 thermoelectric alloys. Previous theoretical studies predict that single crystals Mg3(Sb,Bi)2 can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n‐type Mg3(Sb,Bi)2 single crystals. Here, the first thermoelectric properties of n‐type Te‐doped Mg3Sb2 single crystals, synthesized by a combination of Sb‐flux method and Mg‐vapor annealing, is reported. The electrical conductivity and carrier mobility of single crystals exhibit a metallic behavior with a typical T−1.5 dependence, indicating that phonon scattering dominates the charge carrier transport. The absence of any evidence of ionized impurity scattering in Te‐doped Mg3Sb2 single crystals proves that the thermally activated mobility previously observed in polycrystalline materials is caused by grain boundary resistance. Eliminating this grain boundary resistance in the single crystals results in a large enhancement of the weighted mobility and figure of merit zT by more than 100% near room temperature. This work experimentally demonstrates the accurate understanding of charge‐carrier scattering is crucial for developing high‐performance thermoelectric materials and indicates that single‐crystalline Mg3(Sb,Bi)2 solid solutions can exhibit higher zT compared to polycrystalline samples.

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“…Reproduced with permission. [8] Copyright 2017, IOP Publishing Ltd. c) Band structure of BP from 1 to 5 L obtained from HSE06 hybrid functional calculation. The direct bandgap is shown for all thicknesses.…”

Section: Layer-dependent Optical Spectramentioning

confidence: 99%

“…[1][2][3] Heralded by the discovery of graphene, [4] many types of 2D materials have sprung up, including hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), III-VI compounds, and black phosphorus (BP). [5][6][7][8][9][10] These materials have similar layered structure to graphite so that they can be isolated down to single or several atomic layers. In optoelectronic applications, graphene without a bandgap is not quite suitable for on/off state switching or photodetection.…”

Section: Introductionmentioning

confidence: 99%

Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications

Sun

et al. 2019

Small Methods

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The rapid development of the semiconductor industry calls for the exploration of novel semiconductors to cater to modern technical and commercial needs. Recently, black phosphorus (BP) has emerged as a new class of 2D semiconducting material and has attracted intensive research attention. The high carrier mobility and tunable direct bandgap of BP deliver great promise in photonic and optoelectronic device applications. Furthermore, the unique intrinsic anisotropy arising from the puckered structure can be exploited in the design of new devices. This review briefly introduces the history of BP and puts emphasis on recent advances pertaining to its optical properties and applications in the photonic and optoelectronic fields. From the perspective of mass production and practical use of BP, some of the research challenges and opportunities are discussed.

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Anisotropic ferromagnetism in Fe x Sn1−x O2 nanostructure arrays

Cited by 13 publications

References 27 publications

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

Metallic n‐Type Mg₃Sb₂ Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications

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Anisotropic ferromagnetism in Fe x Sn1−x O2 nanostructure arrays

Cited by 13 publications

References 27 publications

High‐Performance N‐type Mg3Sb2 towards Thermoelectric Application near Room Temperature

High‐Performance N‐type Mg3Sb2 towards Thermoelectric Application near Room Temperature

Metallic n‐Type Mg3Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance

Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications

Contact Info

Product

Resources

About

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

High‐Performance N‐type Mg₃Sb₂ towards Thermoelectric Application near Room Temperature

Metallic n‐Type Mg₃Sb₂ Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance