Magnetic
topological semimetals (MTSs) are quantum materials highly
desirable for spintronics. We report the synthesis, the crystal structure,
the chemical bonding analysis, the magneto(transport) properties,
and the bulk and surface electronic structures of GdBiTe. It is a
high-Z isostructural analogue of the archetypical
nodal-line TS ZrSiS and a recently discovered MTS LnSbTe (Ln = Ce, Gd). GdBiTe crystallizes in the nonsymmorphic
space group P4/nmm (No. 129) with a = 4.3706(2) Å and c = 9.2475(7)
Å. Chemical bonding analysis describes it as a layered structure
of alternating weakly bonded double-stacked covalent [GdTe] layers
and planar square [Bi] nets. GdBiTe exhibits an antiferromagnetic
transition at T
N = 15 K, and an additional
transition, possibly a spin reorientation into a canted antiferromagnetic
state, occurs below ca. 5 K. The electrical resistivity is compatible
with a semimetallic behavior above T
N.
The Hall coefficient is negative, reflecting an electron-like character
of the transport in a semimetal. The magnetoresistance presents a
negative contribution at temperatures lower than ca. 30 K, consistent
with the freezing of spin fluctuations due to the applied field. First-principles
calculations identify a collinear antiferromagnetic ground state with
the Gd(III) magnetic moments coupled ferromagnetically in-plane (easy
axis along [100]) and antiferromagnetically along the c axis. This spin alignment differs from the reported LnSbTe and enables new scenarios of symmetry breaking due to magnetic
order and spin–orbit coupling in a symmetry-protected topological
semimetal. GdBiTe hosts exotic topological features resulting from
an interplay of lattice symmetry, magnetism, and topology. Its collinear
antiferromagnetic phase exhibits fingerprints of the nodal lines in
the bulk electronic spectrum confined to k
z
= π/c planes and a surface
state with a symmetry-protected crossing at the (010) face, whereas
the paramagnetic phase is a weak topological insulator and a higher-order
topological insulator with topologically protected surface states
at the (100), (010), and (001) planes. GdBiTe is also better suited
for topological transport properties than LnSbTe
thanks to a gapped trivial electron pocket at the Γ point. The
isostructural LaBiTe was synthesized as a single-phase powder (sp.
gr. P4/nmm; a =
4.48819(9) Å, and c = 9.5501(3) Å). Its
bulk and surface electronic spectra are similar to the nonmagnetic
case of GdBiTe.