Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

Bobela, David C.; Branz, Howard M.; Stradins, Paul

doi:10.1063/1.3592264

Cited by 18 publications

(8 citation statements)

References 19 publications

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“…For example, the agglomeration of two divacancies of which one is not fully hydrogen-passivated, as can occur in process I, leads to a fully hydrogen-passivated tetravacancy: V 2 H 4 + V 2 H 6 → V 4 H 10 . Such an improved hydrogen passivation degree could be the reason for the reduced LID that was recently observed for a-Si:H annealed at 350-400 °C prior to light soaking [86].…”

Section: Structural Model Describing the Evolution Of Open Volume mentioning

confidence: 99%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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Section: Structural Model Describing the Evolution Of Open Volume mentioning

confidence: 99%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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“…First we have to notice that hydrogen within the structure diffuses to the top layer during annealing where it is trapped on the defects (dangling bonds) or effuses. Previous works have proposed that the N layer of the PIN is more damaged during light-soaking generating more dangling bonds, which are in turn, high absorption sites for the diffusing hydrogen during annealing [12]. From the evolution of Raman before and after light-soaking, we show that this long range motion of hydrogen causes a rearrangement and crystallization on the film followed by an increase of the interfaces.…”

Section: Methodsmentioning

confidence: 87%

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

Hamui

Monroy

Cabarrocas

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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This work describes a study performed on pmSi:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

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“…Nuclear magnetic resonance (NMR) studies [ 5 ] on a ‐Si:H samples have indicated that the motion of H atoms, which are produced by the light‐induced breaking of SiH bonds, plays an important part in recovering the photovoltaic stability of the affected a ‐Si:H samples upon annealing at 350–400 °C. [ 6 ] Thus, an understanding of the motion of H atoms in a ‐Si in the presence of inhomogeneities is of crucial importance to address the photovoltaic stability of a ‐Si:H upon light irradiation.…”

Section: Introductionmentioning

confidence: 99%

Ab Initio Hydrogen Dynamics and the Morphology of Voids in Amorphous Silicon

Biswas

Limbu

2021

Physica Status Solidi (b)

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This article presents an ab initio study of hydrogen dynamics inside nanometer‐size voids in amorphous silicon (a‐Si) within the framework of the density‐functional theory for a varying hydrogen load of 10–30 atoms per void at the low and high temperature of 400 and 700 K, respectively. Using the local density approximation (LDA) and its generalized‐gradient counterpart (GGA), the dynamics of hydrogen atoms inside the voids are examined with an emphasis on the diffusion of H atoms/molecules, and the resulting nanostructural changes of the void surfaces. The results from simulations suggest that the microstructure of the hydrogen distribution on the void surfaces and the morphology of the voids are characterized by the presence of a significant number of monohydride SiH bonds, along with a few dihydride SinormalH2 configurations. The study also reveals that a considerable number (about 10–45 at%) of total H atoms inside a void can appear as H2 molecules for a hydrogen load of 10–30 H atoms per void. The approximate shape of the voids is addressed from a knowledge of the positions of the void‐surface atoms using the convex‐hull approximation and the Gaussian broadening of the pseudoatomic surfaces of Si and H atoms.

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Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

Abstract: Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films J. Appl. Phys. 113, 173509 (2013); 10.1063/1.4803686Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon

Cited by 18 publications

References 19 publications

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

Ab Initio Hydrogen Dynamics and the Morphology of Voids in Amorphous Silicon

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