Annealing behavior of the system of metastable hydrogen-related defects M3/M4 in n-GaAs

Soltanovich, O. A.; Yakimov, E. B.; Kagadei, V. A.; Romanenko, S. V.

doi:10.1016/j.physb.2003.09.070

Cited by 5 publications

(5 citation statements)

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“…The frequencies in brackets are calculated ones and have been taken from [173]. spectroscopic studies, a microscopic identification of this defect has not been achieved up to now [181].…”

Section: Unidentified Complexesmentioning

confidence: 99%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

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“…The frequencies in brackets are calculated ones and have been taken from [173]. spectroscopic studies, a microscopic identification of this defect has not been achieved up to now [181].…”

Section: Unidentified Complexesmentioning

confidence: 99%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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“…In addition, in [18] there are no data that RBA at 400 K was applied to obtain M4 peak and to confirm the metastability of E(0.36) and E(0.38) traps; only annealing without applied bias is clearly reported. And finally, the activation energy for M4 trap is known to be in a range of 0.29-0.33 eV [1][2][3][4][5][6][8][9][10][11][12], which is noticeably lower than the values reported in [18]. The Arrhenius curves for deep traps E(0.36) and E(0.38) from [18] are presented in Fig.…”

Section: M4 Peak Components Resolved By Laplace Dltsmentioning

confidence: 84%

“…We shall refer to the M4 peak components as M4a (the component with a slower emission rate) and M4b (the component with a higher emission rate). Unlike our previous notation in [9,10], we don't mean here that only one of the components corresponds to M3.…”

Section: M4 Peak Components Resolved By Laplace Dltsmentioning

confidence: 99%

“…In [4,5,9,10], the EL2 center was considered as a precursor for the M3/M4 defect, however, the M4 concentration was determined to be higher than EL2 concentration before hydrogenation. [9].…”

Section: M4 Peak Components Under Metastable Reconfigurationmentioning

confidence: 99%

“…The identification of the M3/M4 defect structure should also help to understand the EL2 defect nature and the role of hydrogen in defect formation. Several proposals for the M3/M4 defect composition and number of included hydrogen atoms were made [8][9][10], however, the microscopic structure and reconfiguration mechanism for M3/M4 defect are still not understood. A recent report on defects exhibiting metastable properties similar to M3/M4 in Ar-plasma treated n-GaAs [11] makes the M3/M4 defect even more interesting.…”

Section: Introductionmentioning

confidence: 99%

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Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy

Soltanovich¹,

Kolkovsky²,

Yakimov³

et al. 2014

AIP Conference Proceedings

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Articles you may be interested inLaplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb J. Appl. Phys. 113, 024505 (2013); 10.1063/1.4774100Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n -type silicon studied by isothermal deep-level transient spectroscopy Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy Abstract. Metastable hydrogen-related M3/M4 defects in n-GaAs epilayers grown by MOVPE are investigated using the high-resolution Laplace DLTS technique. The clear separation of the M4 peak in two components is experimentally obtained. It is shown that the M4 components have different field dependences of the emission rates and can be resolved in electric fields higher than 4·10 4 V/cm. The relations between the Laplace DLTS signal intensities of M3 defect and that of the M4 components during the metastable transformation of the M3/M4 center are studied and discussed.

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