One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers

Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy

“…In addition, in [18] there are no data that RBA at 400 K was applied to obtain M4 peak and to confirm the metastability of E(0.36) and E(0.38) traps; only annealing without applied bias is clearly reported. And finally, the activation energy for M4 trap is known to be in a range of 0.29-0.33 eV [1][2][3][4][5][6][8][9][10][11][12], which is noticeably lower than the values reported in [18]. The Arrhenius curves for deep traps E(0.36) and E(0.38) from [18] are presented in Fig.…”

“…The obtained relation between M4a, M4b and M3 intensities should be carefully checked in further experiments and compared with results from other samples. Usually, M4 concentration is reported to be higher than the M3 concentration, and in some studies [3,4,9,12], the ratio of M4 and M3 concentration is about a factor of 2. The precise determination of this ratio needs to take into account the descending profiles of the defects and proper corrections on the width of λ-layer.…”

“…In most studies, the M4 DLTS peak amplitude exceeds significantly that of M3 [3,4,9,12]. This led to the assumption that two different components, which cannot be resolved by conventional DLTS, give contribution to the M4 peak.…”