Deep levels in H-irradiated GaAs1-xNx (x &amp;lt; 0.01) grown by molecular beam epitaxy

Shafi, Muhammad; Mari, Riaz Hussain; Khatab, A.; Henini, M.; Polimeni, A.; Capizzi, M.; Hopkinson, M.

doi:10.1063/1.3664823

Cited by 13 publications

(12 citation statements)

References 28 publications

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“…This is consistent with DLTS measurements observed by Al Saqri et al [10]. Whereas the Schottky barrier height increases with decreasing concentration [9]. Table 2: Variation of n-factor, series resistance and barrier height with %N content and γ-radiation.…”

Section: Accepted Manuscriptsupporting

confidence: 80%

“…As grown samples have low leakage current compared to irradiated ones. Such increase has been attributed to the increase of generation recombination centers and image force barrier lowering [9,14]. Reverse leakage current also exhibits strong dependence on the N concentration.…”

Section: Accepted Manuscriptmentioning

confidence: 90%

“…This ratio decreased with increasing nitrogen content and irradiation. It is known that nitrogen induce deep defects levels in band gap [9]. Irradiation is also known to induce defects in the structure of devices and reduce rectifying behavior [6,10].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…These values were extracted from C-V characteristics measured at high frequency (1 MHz), so to avoid interface state charges contribution [9,10,32]. We show a decrease in donor concentration for 0.2%N and 0.4%N diodes.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…However, Bobby et al [8] found a decrease in series resistance and in ideality factor for Au/n-GaAs γ irradiated diodes. Recent experimental studies on particles irradiation effect on Ti/Au/GaAsN diodes have been undertaken by Shafi et al [9] and Al Saqri et al [10]. Shafi used Laplace Deep Level Transient Spectroscopy (LDLTS) technique to investigate the effect of hydrogen irradiation on deep traps in GaAs 1-x N x .…”

Section: Accepted Manuscriptmentioning

confidence: 99%

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Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptsupporting

confidence: 80%

Section: Accepted Manuscriptmentioning

confidence: 90%

Section: Accepted Manuscriptmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

See 3 more Smart Citations

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Bachir Bouiadjra,

Kadaoui,

Saidane

et al. 2024

J Mater Sci: Mater Electron

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Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

Saqri

Felix

Aziz

et al. 2015

Current Applied Physics

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a b s t r a c tThis work reports the effect of gamma (g-) irradiation on dilute GaAsN with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability using CurrenteVoltage (IeV) and Deep Level Transient Spectroscopy (DLTS) measurements in the temperature range from 10 K to 450 K. The IeV results indicate that the irradiation effect was more pronounced in the samples with nitrogen concentration of 0.4%. Additionally, the irradiated samples showed an ideality factor higher than the as-grown samples. On the other hand, for temperatures above 265 K the barrier height of the irradiated samples with 0.8% nitrogen is higher than the as-grown samples. The DLTS measurements revealed that after irradiation the number of traps either decreased remained constant, or new traps are created depending on the concentration of nitrogen. For samples with N ¼ 0.2% e 0.4% the number of traps after irradiation decreased, whereas for samples with N ¼ 0.8% À 1.2 % the number of traps remained the same. However, the properties of some traps such as capture cross-sections and density increased by about 2 orders of magnitude. The origin of the defects present before and after irradiation are discussed and correlated.

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Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

Cited by 13 publications

References 28 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

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