Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Abstract

(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

Electron irradiation degradation on Silicon Schottky diode interface

“…However, there was an increase in the Fermi energy level [46]. The diffusion potential and barrier height changed depending on the irradiation dose [47,48]. Vdif and Φb values increased as a result of 25 gray irradiation and decreased as a result of 50 gray irradiation.…”

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

“…Notice that series resistance has a peak for all diodes with peaks shifting towards positive voltage region. Rs temperature dependence is attributed to activation of interface states (Teffahi et al, 2016). Series resistance of irradiated samples has increased due to the decrease of carriers' mobility and carriers' removal effect (Behle and Zuleeg, 1972).…”

“…As previously described (Teffahi et al, 2016), Schottky diodes are made of an n-GaAs substrate on top of which is grown a 0.1μm thick Si-doped (2.10 18 cm -3 ) epitaxial buffer layer of GaAsN followed by a 1μm thick Si-doped (3.10 16 cm -3 ) epitaxial active layer of GaAsN. At this stage, structures were ion irradiated at room temperature in a gamma cell Cobalt irradiator at a dose of 50 kGy with a 5.143 kGy/h dose rate.…”

“…In our previous work (Teffahi et al, 2016) we have characterized electrical properties of Ti/Au/GaAs 1-x N x Schottky diodes at room temperature using I-V and C/G-V-f techniques, The investigated parameters are ideality factor (n), series resistance (Rs), barrier height (Φ B ), doping concentration (N D ), relaxation time and density of interface states (Nss). We have shown a decrease in measured barrier height and an increase in extracted Ideality factor and the series resistance.…”

Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure

“…The impact of particle irradiation effect on Ti/Au/ GaAsN structures has also been declared in the literature [31,32] using deep level transient spectroscopy (DLTS) technique and current-voltage (I-V) measurement to understand the impact of hydrogen irradiation on GaAs 1−x N x [33]. In these studies, for some samples hydrogen irradiation has passivated many defects and degraded the concentration while creating new defects.…”