Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

Saqri, N. Al; Felix, Jorlandio F.; Aziz, Mohsin; Jameel, Dler; Araujo, C. I. L. de; Albalawi, Hind; mashary, Faisal Al; Alghamdi, Haifa Mohammed; Taylor, David; Henini, M.

doi:10.1016/j.cap.2015.07.010

Cited by 15 publications

(14 citation statements)

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“…However diodes with 0.8%N and 1.2%N concentration remain insensitive to irradiation. This is consistent with DLTS measurements observed by Al Saqri et al [10]. Whereas the Schottky barrier height increases with decreasing concentration [9].…”

Section: Accepted Manuscriptsupporting

confidence: 82%

“…The value of ideality factor n varies from 1.08(1.12) to 1.41(1.51) after irradiation for 0.2%N(0.4%N) samples. The ideality factor value after irradiation is greater than 1 which indicates a contribution from recombination current, besides the main thermionic process, to transport mechanism [10,18,19,20]. The ideality factor n exhibits an increasing trend with increasing concentration.…”

Section: Accepted Manuscriptmentioning

confidence: 97%

“…It is known that nitrogen induce deep defects levels in band gap [9]. Irradiation is also known to induce defects in the structure of devices and reduce rectifying behavior [6,10]. In diode with 1.2%N, the current quickly become dominated by series resistance.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…However, Bobby et al [8] found a decrease in series resistance and in ideality factor for Au/n-GaAs γ irradiated diodes. Recent experimental studies on particles irradiation effect on Ti/Au/GaAsN diodes have been undertaken by Shafi et al [9] and Al Saqri et al [10]. Shafi used Laplace Deep Level Transient Spectroscopy (LDLTS) technique to investigate the effect of hydrogen irradiation on deep traps in GaAs 1-x N x .…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…However, for sample with 0.8%N concentration, hydrogen irradiation passivated some of the defects and reduced the concentration of others; it also created new defects. In the work of Al Saqri et al [10], they investigated the effect of γ irradiation on the deep levels traps in GaAs 1-x N x using I-V and LDLTS techniques. They found that for samples with N =0.2% -0.4%, the number of traps decreased after irradiation, whereas for samples with N = 0.8% -1.2 %, the number of traps remained the same.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

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Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptsupporting

confidence: 82%