Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

Lin, Tien-Chai; Chang, Sung‐Jin; Chiu, Chin-Fu

doi:10.1016/j.mseb.2005.12.013

Cited by 31 publications

(5 citation statements)

References 12 publications

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“…Many reports have indicated that the conductance and optical transmittance of ITO thin film will change with the annealing temper-atures. 22,23) In this study, we focused on the differences in the RS behavior of HfO 2 -based RRAMs with the ITO electrode under rapid thermal annealing (RTA) at different annealing temperatures and clarified how the ITO electrode affect the RS behavior. The comprehension of the role of the ITO electrode in the RS behavior of HfO 2 -based RRAM is not only beneficial for the disclosure of RRAM mechanism but also for the potential applications of RRAM in the future.…”

Section: Introductionmentioning

confidence: 99%

Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Deng

et al. 2015

Jpn. J. Appl. Phys.

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TiN/HfO 2 /ITO memory devices were fabricated and annealed at 200, 300, and 400 °C. At room temperature (RT), 200 °C, and 300 °C, the devices show the self-compliance phenomenon and a low SET voltage of 0.2 V, while at 400 °C the SET voltage increases to 1.1 V and the low resistance state (LRS) current increases to 8 mA. We deduced that the impact of annealing temperature on the resistive switching behavior is mainly attributed to the indium tin oxide (ITO) electrode. Some Sn 4+ ions in the ITO electrode drift towards the HfO 2 layer owing to the electrical force, then an interfacial layer is formed and acts as an internal resistor. At 400 °C, the remarkable increase of LRS current is attributed to the decreases in both the ITO electrode resistance and the interface resistance.

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Section: Introductionmentioning

confidence: 99%

Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Deng

et al. 2015

Jpn. J. Appl. Phys.

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“…The lowest resistivity (8.7×10 −4 Ω-cm) was obtained from ITO films deposited at 450°C. Although this value is higher than that (1-6×10 −4 Ω-cm) of the film deposited using conventional ceramic target [21][22][23][24][25], the ITO films in this work is applicable to low cost transparent electrode for optoelectronic devices such as touch panel. The resistivity did not show significant temperature dependence, thus proving that the ITO films are degenerate semiconductors.…”

Section: Resultsmentioning

confidence: 76%

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Lee

2008

J Electroceram

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Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T s ) exhibit a (411) preferred orientation but the films deposited at high T s prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T s was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10 −4 Ω-cm) was obtained from ITO films deposited at 450°C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.Keywords ITO film . Sputtering . Powder target . Substrate temperature 2 Experimental ITO films were prepared by a commercial r.f. magnetron sputtering system. The chamber was pumped by a turbomolecular pump and the base pressure before deposition was about 1.3×10 −3 Pa. ITO powders with SnO 2 content of 10°wt% were used as targets after slightly compressing them into a cupper holder, 3 in. in diameter. The substrate J Electroceram (2009) 23:554-558

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“…The annealing processes in the table were all carried out in hydrogen-containing ambient (with different H 2 /N 2 ratios). For the as-deposited films prepared by DC magnetron sputtering (DCMS) and RF magnetron sputtering (RFMS), the resistivity is (3.4-6.2) × 10 −4 Ω•cm and the average transmittance in the visible light range (Ave. T) is 70-90% [21,51,52]. After annealed at 500 • C, the resistivity decreases to (2.2-4.1) × 10 −4 Ω•cm and the Ave. T is improved to 86-90%.…”

Section: Resultsmentioning

confidence: 99%

Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range

et al. 2022

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Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10−3 Ω·cm for the as-deposited film to the lowest value of 6.7 × 10−4 Ω·cm after annealed at 700 °C for 40 min. The role of hydrogen (H) in changing the film properties was explored and discussed in a large temperature range (300–800 °C). When annealed at a low temperature of 300–500 °C, the incorporated H atoms occupied the oxygen sites (Ho), acting as shallow donors that contribute to the increase of carrier concentration, leading to the decrease of film resistivity. When annealed at an intermediate temperature of 500–700 °C, the Ho defects are thermally unstable and decay upon annealing, leading to the reduction of carrier concentration. However, the film resistivity keeps decreasing due to the increase in carrier mobility. Meanwhile, some locally distributed metallic clusters formed due to the reduction effect of H2. When annealed at a high temperature of 700–800 °C, the metal oxide film is severely reduced and transforms to gaseous metal hydride, leading to the dramatic reduction of film thickness and carrier mobility at 750 °C and vanish of the film at 800 °C.

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Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

Cited by 31 publications

References 12 publications

Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range

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Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

Cited by 31 publications

References 12 publications

Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures

Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range

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Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures