Annealing Effect on (SnO<SUB>2</SUB>)<SUB>0.3</SUB>:(In<SUB>2</SUB>O<SUB>3</SUB>)<SUB>0.7</SUB><SUB> </SUB>Solar Cell Prepared by PLD Technique

Abstract

Indium tin oxide (ITO) thin films were produced by Q-switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In 2 O 3 :SnO 2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO 2 :In 2 O 3 /p-Si and SnO 2 :In 2 O 3 /Psi/p-Si annealed and as deposited samples.