Nickel-doped Tin dioxide (NSO) nanostructured thin films were deposited using chemical spray pyrolysis at 450°C at various spray rates. The structural, morphological, and optical properties of the prepared nanostructured thin films were investigated to determine the effect of these parameters on the sensing properties of NSO film. X-ray diffraction revealed a polycrystalline structure with an increasing crystallite size as the deposition rate increased, which resulted in a gradual decrease in the bandgap. The FE-SEM images demonstrate that the deposition rate significantly influences the surface morphology and gas sensitivity performance. The sensitivity of the NO2 gas sensor fabricated employing NSO thin films increased as the deposition rate, and NO2 concentration was increased. At an optimal sensing temperature of 373 K, the maximum sensitivity was 120%, with a response and recovery time of 17 and 19 seconds, respectively.

In this work, fundamental wavelength (1064 nm) Q-switched Nd:YAG laser with 800 mJ peak energy on SnO 2 :In 2 O 3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In 2 O 3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μ H increase at 0.1 ratio then decrease with more In 2 O 3 content.

Indium tin oxide (ITO) thin films were produced by Q-switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In 2 O 3 :SnO 2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO 2 :In 2 O 3 /p-Si and SnO 2 :In 2 O 3 /Psi/p-Si annealed and as deposited samples.