In the present study, (Cu 2 S) thin films were deposited by using chemical bath deposition (CBD) technique. The effect of the preparation conditions on film properties was studied by varying the molar concentration (M) of thiourea [CS(NH 2) 2 ] (0.6, 1, 1.3, 1.6 M). The optical properties data revealed that the optical Energy gap was in the range (2.68-2.75eV). The structural properties of the films were investigated by X-ray diffraction (XRD). The results indicate that they have a nanocrystalline structure with chalcocite phase and crystalline structure at the diffraction angle 32.7° corresponds to the crystalline level (431) which belongs to the monoclinic crystal structure. The results of the scanning electron microscopy (SEM) showed the formation of nanostructured Cu 2 S with grain size in the range of (90-140nm). Atomic Force Microscope (AFM) was used to study the surface topography and grain distribution on the film surface. Energy dispersive X-ray (EDX) was used to investigate the elemental analysis of the film. Raman peaks were observed at (265-474cm-1). Hall Effect showed that all (Cu 2 S) films have p-type conductivity due to the copper, and the electrical conductivity increases with increase the molecular concentration of thiourea.

In this work, fundamental wavelength (1064 nm) Q-switched Nd:YAG laser with 800 mJ peak energy on SnO 2 :In 2 O 3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In 2 O 3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μ H increase at 0.1 ratio then decrease with more In 2 O 3 content.

Indium tin oxide (ITO) thin films were produced by Q-switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In 2 O 3 :SnO 2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO 2 :In 2 O 3 /p-Si and SnO 2 :In 2 O 3 /Psi/p-Si annealed and as deposited samples.

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