1983
DOI: 10.1109/edl.1983.25801
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Annealing of ion-implanted silicon by a dense plasma focus

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Cited by 6 publications
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“…Due to heating of specimen by the energetic ions beams emitted from focus region, separate heating of specimen during the implantation can be avoided. Lue et al [19] used the plasma focus for annealing the ion implanted silicon for the first time. Another unique feature of plasma focus is that it may be employed for the surface modification of insulator and semiconductors [19,20], as the target need not to be electrically conductive.…”
Section: Introductionmentioning
confidence: 99%
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“…Due to heating of specimen by the energetic ions beams emitted from focus region, separate heating of specimen during the implantation can be avoided. Lue et al [19] used the plasma focus for annealing the ion implanted silicon for the first time. Another unique feature of plasma focus is that it may be employed for the surface modification of insulator and semiconductors [19,20], as the target need not to be electrically conductive.…”
Section: Introductionmentioning
confidence: 99%
“…It is an excellent and powerful device for the generation of X-rays, neutron, relativistic electron and energetic ion beams [12,18]. The energetic ion beams emitted from the plasma focus device have been used for a variety of applications like surface properties modification, thin film deposition, ion assisted coating and ion implantation [12][13][14][15][16]19,20]. Due to heating of specimen by the energetic ions beams emitted from focus region, separate heating of specimen during the implantation can be avoided.…”
Section: Introductionmentioning
confidence: 99%
“…Another distinct advantage offered by the technique is that the target need not be electrically conductive. As a result it can also be used for surface modification of insulators/semiconductors [15,16]. These features give the DPF great importance for the generation of relatively deep implantation profiles in materials [17].…”
Section: Introductionmentioning
confidence: 99%
“…The plasma focus device has emerged as a strong candidate for plasma processing of materials after the pioneering work of Lue et al [15], who used the DPF for annealing of ion implanted silicon. During the last two decades the DPF has been used to deposit AlN as inter-layer on steel for diamond growth [18], to induce crystallization in amorphous PZT films [19], to achieve amorphization in as-grown CdS films [20], to change the orientation of CdI 2 films [21], to enhance T c of superconducting BPSCCO films [22], to deposit fullerene films on silicon [23], to deposit titanium nitride films on AISI 304 [24] and many others.…”
Section: Introductionmentioning
confidence: 99%