Annealing of Mg implants in GaAs using incoherent radiation

Blunt, R.T.; Szweda, Roy; Lamb, MJ; Cullis, A. G.

doi:10.1049/el:19840309

Cited by 28 publications

(5 citation statements)

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“…10) after a 900~ anneal. They also found good agreement with Blunt et al (51) for 1 • 10 TM Mg + cm -2 implants. Patel and Sealy also observed that the sheet resistivity decreased with increasing annealing temperature for doses up to 1 • 1014 Mg + cm -2.…”

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...supporting

confidence: 83%

“…Tiwari et al (54) found that for the highest implant dose of 1 • 1015 Mg + cm -2 the electrical activity remained approximately constant for anneal temperatures of 800 ~ 950~ In contrast to Blunt (51) and Patel (53) they reported that for a dose of 1 x 10 TM Mg + cm -2 the optimum annealing a Sulfur profiles were significantly diffused as shown in Fig. 5b.…”

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 90%

“…Magnesium implants.--The use of an incoherent light furnace to activate magnesium implanted in GaAs was 9 first reported by Blunt et al (51) for a dose of 1 x 1014 cm -2 at an ion energy of 150 keV. They attained a peak hole concentration of 5 x 10 TM cm -3 for a through nitride implant after annealing under optimized conditions of 800~ for 5s.…”

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 99%

“…5b. temperature was 900~ The general consensus of opinion (51)(52)(53)(54) is that the electrical activity decreases at temperatures above 900~ possibly due to loss of magnesium into the encapsulant.…”

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 99%

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Review of Rapid Thermal Annealing of Ion Implanted GaAs

Gill¹,

Sealy²

1986

J. Electrochem. Soc.

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Results of rapid thermal annealing (RTA) of ion implanted normalGaAs for times of 1–100s are reviewed. Comparison between silicon, selenium, and other donor ions is presented and the highest doping levels achieved are highlighted. P‐type dopants such as zinc, magnesium, and beryllium are also discussed, as well as the use of dual implants to enhance activation. N‐type doping levels up to 3×1019 cm−3 have been demonstrated, whereas for p‐type doping levels approaching 1020cm−3 with little diffusion have been achieved. The less stringent requirements imposed on both the encapsulant and substrate material when RTA is used are also discussed.

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Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...supporting

confidence: 83%

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 90%

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 99%

Section: Fig Sb Electron Concentration and Hall Mobility Depth Profil...mentioning

confidence: 99%

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Review of Rapid Thermal Annealing of Ion Implanted GaAs

Gill¹,

Sealy²

1986

J. Electrochem. Soc.

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“…However when the S redistribution is inhibited by damage, electrical activity is reduced. It has been reported previously that RTA is a useful technique for achie~ng high electrical activation and low dopant diffusion (9)(10)(11)(12)(13)(14)(15)(16). Therefore we have decided to investigate the application of RTA for the activation of S implants in GaAs.…”

Section: Resultsmentioning

confidence: 99%

MeV S Implantation into GaAs

Thompson

Dietrich

1988

J. Electrochem. Soc.

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The physical and electrical characteristics of MeV S implants into normalGaAs have been studied. The redistribution of the ion implanted S has been investigated using secondary ion mass spectroscopy and electrochemical capacitance‐voltage profiling. The redistribution of the implanted S has been greatly reduced when rapid thermal anneal, instead of furnace anneal, is employed for activation. The measured diffusion coefficient (using RTA) is 3.7×10−12 cm2/normals , which is comparable to that measured in furnace annealed samples. Hence the reduction in the redistribution is solely from a reduction of the time at temperature. The rapid thermal anneal temperature required for activation is dependent upon implantation dose. 950°C was adequate for activation of implants of 1.15 MeV S with fluences less than or equal to 5×1013/cm2 . In the case of 1.15 MeV S, 5×1014/cm2 , after an 1100°C, 10s anneal, the carrier profile showed incomplete activation and residual defects were observed using cross‐sectional transmission electron microscopy. Device quality buried layer and extended layer profiles have been produced and characterized.

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Rapid Thermal Annealing of Ion Implanted Semiconductors

Sealy

1988

Nuclear Physics Applications on Materials Science

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Annealing of Mg implants in GaAs using incoherent radiation

Cited by 28 publications

References 0 publications

Review of Rapid Thermal Annealing of Ion Implanted GaAs

Review of Rapid Thermal Annealing of Ion Implanted GaAs

MeV S Implantation into GaAs

Rapid Thermal Annealing of Ion Implanted Semiconductors

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