Anode Engineering for the Insulated Gate Bipolar Transistor—A Comparative Review

Green, D.W.; Vershinin, K.; Sweet, M.; Narayanan, E.M. Sankara

doi:10.1109/tpel.2007.900557

Cited by 24 publications

(12 citation statements)

References 21 publications

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“…h p has alternatively been related to the Gummel number G by G = 1/h p , although such a relationship should be used with care [46]. In [47] the effect of varying the Gummel number, i.e. h p , on the on-state/switching loss trade-off is studied.…”

Section: A Dependence Of Stored Charge On Emitter Recombinationmentioning

confidence: 99%

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Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

195

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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Section: A Dependence Of Stored Charge On Emitter Recombinationmentioning

confidence: 99%

“…The second term is that expected from recombination into the anode under high-level injection conditions. Assuming that I n1 is given by bI C /(b + 1), substitution of this into equation (47) results in an effective emitter recombination parameter h p(ef f ) :…”

Section: B Emitter Recombination Through a Buffer Layermentioning

confidence: 99%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

195

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“…The AG-RC-IGBTs have the parasitic n-p-n transistor at their anode sides. The n-p-n transistor provides an electron extraction path during the turn-off of the IGBT, which can reduce the turn-off time and loss [12]. In Figs.…”

Section: B Transient Characteristicsmentioning

confidence: 99%

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Zhu

Chen

2012

IEEE Trans. Electron Devices

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A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper, wherein a gate on the reverse IGBT is intrinsically off in the forward conduction state and can be automatically turned on in the reverse conduction state. Therefore, bidirectional conduction capability with snapback-free characteristics is achieved in the novel RC-IGBT. Depending on the parameters set on the reverse IGBT, its operation mode can be either like an antiparallel IGBT or like an antiparallel MOS-controlled thyristor (MCT). The antiparallel MCT mode can yield low snapback current densities and low ON-state voltages in both forward and reverse conductions. Two-dimensional numerical simulations show that snapback-free characteristics are obtained in the AG-RC-IGBT antiparallel with an IGBT by a 15-μm-wide half-pitch in both forward and reverse conduction states. The antiparallel MCT mode achieves low ON-state voltages of 0.97 and 1.6 V at the current density of 200 A/cm 2 in reverse and forward conduction states, respectively.

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“…When compared with metal oxide semiconductor field effect transistors, they do have to connect an anti-parallel diode across the IGBT structure and this leads to additional area consumption to accommodate the on-chip diodes. Consequently, lots of reverse conducting vertical IGBTs and the shorted anode LIGBTs have been proposed and discussed [6][7][8]. However, it is difficult to keep the snap-back voltage very low and optimise the same silicon for both the modes while maintaining good reverse conduction through the body diode.…”

Section: Introductionmentioning

confidence: 99%

Reverse conducting lateral insulated‐gate bipolar transistors with a non‐local band‐to‐band tunnelling junction

Zhang

Qiao

et al. 2014

Micro & Nano Letters

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A new reverse conducting lateral insulated-gate bipolar transistor (LIGBT) structure with a non-local band-to-band tunnelling junction is proposed and its operating principle is demonstrated in detail for a power-switching device. By utilising the reverse bias characteristics of the tunnelling junction, the proposed LIGBT can operate successfully in the freewheeling diode mode without an external anti-parallel diode. Analysis has illustrated that the proposed LIGBT can achieve a reverse knee voltage of −1 V and a lower reverse conduction voltage drop of −1.4 V at a current density of 100 A/cm 2. It also shows a good temperature effect on the forward and reverse current. Moreover, it exhibits a better soft reverse recovery performance and about two times higher soft factor than the lateral P-iN diode.

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Anode Engineering for the Insulated Gate Bipolar Transistor—A Comparative Review

Cited by 24 publications

References 21 publications

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Reverse conducting lateral insulated‐gate bipolar transistors with a non‐local band‐to‐band tunnelling junction

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