2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
DOI: 10.1109/relphy.2000.843887
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Anode hole injection versus hydrogen release: the mechanism for gate oxide breakdown

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Cited by 28 publications
(9 citation statements)
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“…The desorption rate of hydrogen from Si surfaces was measured as a function of incident electron energy [52] and showed a dependence remarkably similar to the voltage dependence of the trap generation process [23], [25]. However, a major perceived stumbling block to the general acceptance of the "hydrogen model" for breakdown has been the apparent lack of any isotope effect for the breakdown process [53] compared to the large effect observed for hydrogen/deuterium desorption and for channel hot electron-induced interface degradation [54]. This may have recently been resolved by the observation [55], [56] of a significant isotope effect on the stress-induced flat-band voltage shift and stress-induced leakage current (SILC), which is a measure [44], [57], [58] of the bulk traps which ultimately relate to breakdown.…”
Section: Physical Models For Defect Generationmentioning
confidence: 90%
“…The desorption rate of hydrogen from Si surfaces was measured as a function of incident electron energy [52] and showed a dependence remarkably similar to the voltage dependence of the trap generation process [23], [25]. However, a major perceived stumbling block to the general acceptance of the "hydrogen model" for breakdown has been the apparent lack of any isotope effect for the breakdown process [53] compared to the large effect observed for hydrogen/deuterium desorption and for channel hot electron-induced interface degradation [54]. This may have recently been resolved by the observation [55], [56] of a significant isotope effect on the stress-induced flat-band voltage shift and stress-induced leakage current (SILC), which is a measure [44], [57], [58] of the bulk traps which ultimately relate to breakdown.…”
Section: Physical Models For Defect Generationmentioning
confidence: 90%
“…The primary argument against the hydrogen release process for oxide breakdown is the observation that (or ) does not appear to improve if an isotope of hydrogen (like deuterium) is used to passivate the Si/SiO interface [58]. It has been reported that deuterated oxide films have suppressed hydrogen desorption from the interface with silicon and consequently improved immunity to interfacial trap generation due to channel hot-carrier injection [59].…”
Section: Energy and Electron-induced Defect Generationmentioning
confidence: 99%
“…Based on this discussion, we can see that the assumption of uniform deuterium passivation after the direct D 2 anneal process could be incorrect for the devices considered in our paper. Consequently, the interpretation of interface trap generation 16 and SILC 17,18 under uniform stress by anode hole injection model may have to be extended to include the large isotope effect.…”
Section: On the Mechanism Of Interface Trap Generation Under Nonunifomentioning
confidence: 99%