On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Abstract

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Effects of High‐Pressure H2 and D2 Post‐Metallization Annealing on the Electrical Properties of HfO2/Si0.7Ge0.3

“…As shown in Figure 3 and S5, Supporting Information, the degree of new trap generation represented by a gradual increase in the leakage current with increasing V ramp was similar for the FGA and H 2 ‐HPA samples, which suggests that the corresponding SILC characteristics are dominated by the H‐related bonds, such as SiH, GeH, and HfH. By contrast, the D 2 ‐HPA sample exhibited a significantly suppressed leakage current compared with the FGA and H 2 ‐HPA samples during voltage stress, which could be attributed to the strong kinetic isotope effect [ 25,26 ] as observed on the Si substrates.…”