Effects of hydrogen transport and reactions on microelectronics radiation response and reliability

Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs

“…3 and 4 do not indicate the one-to-one correspondence between the decrease in DN ot and increase in DN it , implying that portion of O 3 "Si +Å Si"O 3 near-interface defects is simply neutralized by electrons without participating in reaction (7). Besides, the H 2 molecules released in reaction (8) may diffuse into the oxide to be cracked at positively charged traps through inverse reaction (6) [12], neutralizing the traps and creating additional H + ions for reaction (8). However, as the annealing progresses and DN it exceeds DN ot , the occurrences of both reactions (7) and (8) become less likely so DN ot tends to saturate, while DN it starts even slowly to decrease, which probably means that H Å atoms and H 2 molecules released in reactions (7) and (8) begin to passivate interface traps through the inverse reactions (2) and (3).…”

“…However, in the case of NBT stress, hydrogen atoms are more likely to react with abundance of holes from the substrate inversion layer to form ions [12]:…”

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

“…The interface state generation under irradiation or high electric field stress can involve electronIon Implantation -Research and Applicationhole recombination in a gate insulator as proposed by Lai [142], the hole trapping according to the "hydrogen model" by Griscom [60], or generation of dangling bond defects in the oxide. Experimentally, it has been shown that both the fast and slow interface states can be generated upon oxide damage by high electric field or irradiation [143]. The mechanisms operative in the interface trap built-up upon irradiation or electric field stress are governed by hydrogen impurity, interfacial strain preexisting in thin insulating films on semiconductors, and experimental conditions used to impose damage on MOS devices.…”

Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide

“…He argued that this adverse effect was most likely due to * corresponding author michael.nelhiebel@infineon.com; phone : ++43(0)5 1777 2723 ; FAX: ++43(0)5 1777 3440 hydrogen incorporated in the SNIT, a theory that might sound surprising as hydrogen is reckoned as a perfect annealing gas for the masking of interface defects [3]. Yet, the negative influence of hydrogen to MOS dielectrics is discussed in further papers [e.g, [4][5][6]. A special interest should be paid to articles by Sii, Zhang and co-workers, reporting MOS interface degradation by hydrogen anneals when the bulk of the gate oxide has been loaded with trapped holes prior to annealing [ 7,8].…”