Anodic bonding at low voltage using microstructured borosilicate glass thin-films

Leib, J.; Hansen, Ulli; Maus, Simon; Feindt, Holger; Hauck, Karin; Zoschke, Kai; Toepper, Michael

doi:10.1109/estc.2010.5642923

Cited by 8 publications

(5 citation statements)

References 7 publications

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“…To achieve stable bonding without electrical breakdown in the very thin glass layer, a voltage in the range 30–60 V and a temperature around 300 °C are, in principle, sufficient [ 12 ]. Nevertheless, in this work, the voltage value was increased to 180 V due to the thickness of the oxide layer (1 μm) in the bonding stack.…”

Section: Methodsmentioning

confidence: 99%

“…Si-Glass-Si AB with 2 μm Pyrex 7740 glass (Corning, New York, NY, USA), sputtered on 0.3 μm SiO 2 , was investigated by Hanneborg et al for sensor applications, demonstrating strong bonding with 400 °C and 200 V applied for 10 min [ 11 ]. When compared to sputtering, the e-beam evaporation method—especially plasma-assisted—allows the deposition of glass layers with lower surface roughness (nm range) and lower residual stress, also compatible with the lift-off process [ 12 ]. Sassen et al fabricated a hermetically sealed Si-Glass-Si resonator, bonded at 450–500 °C and 100 V, using an e-beam evaporated 1.5 µm layer (Ra~5 nm) of Schott #8329 glass [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

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Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-Pressure Microcooling Devices

et al. 2023

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Silicon-based microchannel technology offers unmatched performance in the cooling of silicon pixel detectors in high-energy physics. Although Si–Si direct bonding, used for the fabrication of cooling plates, also meets the stringent requirements of this application (its high-pressure resistance of ~200 bar, in particular), its use is reported to be a challenging and expensive process. In this study, we evaluated two alternative bonding methods, aiming toward a more cost-effective fabrication process: Si-Glass-Si anodic bonding (AB) with a thin-film glass, and Au-Au thermocompression (TC). The bonding strengths of the two methods were evaluated with destructive pressure burst tests (0–690 bar) on test structures, each made of a 1 × 2 cm2 silicon die etched with a tank and an inlet channel and sealed with a plain silicon die using either the AB or TC bonding. The pressure resistance of the structures was measured to be higher for the TC-sealed samples (max. 690 bar) than for the AB samples (max. 530 bar), but less homogeneous. The failure analysis indicated that the AB structure resistance was limited by the adhesion force of the deposited layers. Nevertheless, both the TC and AB methods provided sufficient bond quality to hold the high pressure required for application in high-energy physics pixel detector cooling.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-Pressure Microcooling Devices

et al. 2023

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“…To enable ease of use with a range of solvents, for the deposition experiments an adhesive-free fabrication process known as anodic bonding was used for the cell preparation of the cell. − …”

Section: Methodsmentioning

confidence: 99%

Manipulation and Deposition of Complex, Functional Block Copolymer Nanostructures Using Optical Tweezers

et al. 2019

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Block copolymer self-assembly has enabled the creation of a range of solution-phase nanostructures with applications from optoelectronics and biomedicine to catalysis. However, to incorporate such materials into devices a method that facilitates their precise manipulation and deposition is desirable. Herein we describe how optical tweezers can be used to trap, manipulate, and pattern individual cylindrical micelles and larger hybrid micellar materials. Through the combination of TIRF imaging and optical trapping we can precisely control the three-dimensional motion of individual cylindrical block copolymer micelles in solution, enabling the creation of customizable arrays. We also demonstrate that dynamic holographic assembly enables the creation of ordered customizable arrays of complex hybrid block copolymer structures. By creating a program which automatically identifies, traps, and then deposits multiple assemblies simultaneously we have been able to dramatically speed up this normally slow process, enabling the fabrication of arrays of hybrid structures containing hundreds of assemblies in minutes rather than hours.

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“…In order to achieve a stable bonding without electrical breakdown in the very thin glass layer, a voltage in the range of 30-60 V and a temperature around 300 o C are in principle sufficient [12]. Nevertheless, in this work the voltage value has been increased to 180 V due to the thickness of the oxide layer (1 µm) in the bonding stack.…”

Section: Anodic Bonding Processmentioning

confidence: 96%

“…Si-Glass-Si anodic bonding with 2 µm Pyrex 7740 glass (Corning), sputtered on 0.3 µm SiO2, was investigated by Hanneborg et al for sensor applications, demonstrating strong bond at 400 o C and 200 V, applied during 10 min [11]. When compared to sputtering, the e-beam evaporation method, especially plasma-assisted, allows to deposit glass layers with lower surface roughness (nm range) and lower residual stress, providing also the compatibility with lift-off process [12]. Sassen et al fabricated a hermetically sealed Si-Glass-Si resonator, bonded at 450-500 o C and 100 V, using an e-beam evaporated 1.5 µm layer (Ra~5 nm) of Schott #8329 glass [13].…”

mentioning

confidence: 99%

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-pressure Microcooling Devices

Bargiel¹,

Cogan²,

Queste³

et al. 2023

Preprint

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Silicon-based microchannel technology offers unmatched performances for cooling high energy physics silicon-pixels detectors. Although Si-Si direct bonding, used for the fabrication of cooling plates, meets the stringent requirements of this application, in particular high-pressure resistance (~200 bar), it is reported to be a challenging and expensive process. In this work, we have evaluated two alternative bonding methods towards a more cost-effective fabrication process: Si-Glass-Si anodic bonding (AB) with a thin-film glass and Au-Au thermocompression (TC). The bonding strength of the two methods were evaluated with destructive pressure burst tests (0 - 690 bar) on test structures, each made of a 1×2 cm2 silicon die etched with a tank and an inlet channel and sealed with a plain silicon die using AB or TC bonding. The pressure resistance of the structures was measured to be higher for the TC sealed samples (max. 690 bar) than for the AB ones (max. 530 bar) but less reproducible. The failure analysis indicates that the AB structure resistance is limited by the adhesion force of the deposited layers. Nevertheless, both the TC and AB methods provided sufficient bond quality to hold the high pressure required for the high energy physics pixel detectors cooling application.

show abstract

Anodic bonding at low voltage using microstructured borosilicate glass thin-films

Cited by 8 publications

References 7 publications

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-Pressure Microcooling Devices

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-Pressure Microcooling Devices

Manipulation and Deposition of Complex, Functional Block Copolymer Nanostructures Using Optical Tweezers

Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-pressure Microcooling Devices

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