Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs

Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

“…Moreover, the C GD -V G (Figure 4(a)) and C GS -V G (Figure 4(b)) curves measurement are employed to further demonstrate the degradation of SS stretch out after NBTIS at 363 K. In the C GS -V G measurement, the source is connected to capacitance measurement low (CML) and the drain is floating, while in the C GD -V G measurement, the drain electrode is connected to CML and the source is floating. 10 Both of C GD -V G and C GS -V G curves show a stretch out phenomenon of the subthreshold capacitance after the NBTIS at 363 K. It indicates that the stretch out of subthreshold capacitance is induced by the creation of interface traps after the NBTIS. In addition, after 1 day recovery behavior in C-V measurement, both of C GD -V G and C GS -V G curves show the V th shift can recover to the initial state after placing in the dark, but the significant degradation of subthreshold capacitance stretch-out still exists.…”

“…In the capacitance-voltage measurement, the gate-todrain capacitance (C GD ) and the gate-to-source capacitance (C GS ) were measured at 100 KHz. 10 The V th is defined as the V GS of the NI D reaching 0.1 nA. The sub-threshold slope (SS) was extracted from NI D in the sub-threshold region (the NI D ranging from 10 À10 A to 10 À8 A) under linear operation.…”