Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAI

Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co 2 FeSi and Co 2 FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity ρ xx as well as the anomalous Hall resistivity ρ ahe . Analyzing the scaling behavior of ρ ahe in terms of ρ xx points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

“…To gain a deeper understanding of this behavior, the residual resistivity ratio [RRR = (300 K)/ (5 K)] of all samples was studied. The RRR is considered as a qualitative method to identify degree of atomic disorder and lattice defect 38 . It should be noted that, at 5 K, the contribution from temperature-dependent scattering could be nearly neglected.…”

Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

“…These values are similar to those obtained for the Heusler alloys Co 2 Fe(Si, Al). 29 However, as the Al concentration increases to 0.75, a crossover occurs where both the intrinsic and skew-scattering contributions to the AHE rise dramatically to $10 À3 (lX cm) À1 and $10 À1 T À1 , respectively. This is also reflected in the increased curvature of the DR s versus Dq xxT plot of the x ¼ 0:75 data.…”

Effect of deposition temperature on the structure, magnetic and transport properties in Co2MnSi Heusler films

“…Although the scaling law of AHE has been studied a lot in some Co-based Heusler alloys such as Co 2 FeSi and Co 2 FeAl [27,28], the effect of structure disorder on the AHE in Heusler CMS films has not been clarified. In the present work, we prepared CMS films with different structure ordering from chemical sites ordered L2 1 state to completely disordered amorphous state by varying deposition (annealing) temperatures.…”