Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

Migliorato, P.; Reita, C.; Tallarida, G.; Quinn, M.; Fortunato, G.

doi:10.1016/0038-1101(95)00027-q

Cited by 40 publications

(11 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As proposed by Levinson et al 7 and a better approximation for channel thickness t ch in an undoped material, 8 the I-V characteristics including the trap density can be obtained by the following equation:…”

mentioning

confidence: 99%

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Peng

Liu

2009

Applied Physics Letters

View full text Add to dashboard Cite

This paper reported the variation in performance of bias stressed low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) fabricated on metal foil substrate for flexible display applications. The mobility, threshold voltage (Vth), and trap density (Nt) of the proposed p-channel poly-Si TFT as a function of curvature radii were investigated. The significant increase in Vth by 9% was observed as the compressive or tensile mechanical strain increases to 0.1%. In addition, the hole mobility increases by 7% due to an increased compressive strain of 0.1%, while hole mobility decreases by 3.5% with the increase in tensile strain of 0.1%. After dc bias stressing, the LTPS TFT with mechanical strain had better performance than that on flat state in both the mobility drop and Vth shift. Mechanical strain influences the lattice arrangement and electric field at the drain electrode region that resisted device degradation in early stressing period.

show abstract

mentioning

confidence: 99%

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Peng

Liu

2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…If the charge carriers emitted from traps dominate the current then the volume density of functioning traps N can be determined from the expression for the current [26]:…”

Section: Results Of Current Measurements In Mica and Comparison With mentioning

confidence: 99%

Transport mechanism in mica and SiO₂ dielectrics

Pipinys¹,

Lapeika²,

Rimeika³

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

The current -voltage (I-V) characteristics in mica have been measured at different temperatures. The I-V characteristics possessed a temperature dependence, which was more clearly evident at lower fields. A comparison of the experimental results with the Frenkel thermo-emission theory and the theory of multiphonon-assisted tunnelling of charge carriers from the impurity centers, has been performed. It is shown that the experimental data better agree with the phonon-stimulated tunnelling theory than the Frenkel emission theory. Temperature-dependent I-V characteristics of М-SiO 2 -Si structures measured by Waters and Van Zeghbroeck [Appl. Phys. Lett. 76, 8, 1039 (2000)] are also reinterpreted in terms of the phonon-assisted tunnelling processes.

show abstract

“…We would like to mention that in the VRH model, the current is due to carriers traveling from traps to traps in of a conduction band. If electrons released from traps dominate, the current passing through the device may be expressed by the equation [54]:…”

Section: The Phonon-assisted Tunneling Modelmentioning

confidence: 99%

Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Pipinys

Kiveris

2012

Open Physics

View full text Add to dashboard Cite

Abstract:We review and compare two models recently used to describe electronic transport in polymer fibers/nanotubes and carbon nanotubes including graphene nanoribbons, namely, variable range hopping (VRH) in different versions and their modifications on the one hand and electric-field-induced phononassisted tunneling (PhAT) on the other hand. The VRH model is mainly approved on behalf of the results of temperature dependences. However, the field dependencies of the conductivity in the framework of this model remain practically unexplained. At the same time, the PhAT model describes properly not only temperature dependence of conductivity measured in a wide temperature range, but also conductivity/current dependences on field strength using the same set of parameters characterizing the materials

show abstract

Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

Cited by 40 publications

References 12 publications

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Transport mechanism in mica and SiO₂ dielectrics

Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Contact Info

Product

Resources

About

Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

Cited by 40 publications

References 12 publications

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

Transport mechanism in mica and SiO2 dielectrics

Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Contact Info

Product

Resources

About

Transport mechanism in mica and SiO₂ dielectrics