2018
DOI: 10.1016/j.materresbull.2018.03.001
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Anomalous Raman and photoluminescence blue shift in mono- and a few layered pulsed laser deposited MoS2 thin films

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Cited by 28 publications
(14 citation statements)
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“…40 The slight blueshift (approximately 1 cm −1 ) of E 2g 1 and A 1g shifts attributed to the strain from lattice distortion. 41 The Raman shifts were consistent with the AFM and TEM results (Figures 1 and 2).…”
Section: ■ Results and Discussionsupporting
confidence: 87%
See 1 more Smart Citation
“…40 The slight blueshift (approximately 1 cm −1 ) of E 2g 1 and A 1g shifts attributed to the strain from lattice distortion. 41 The Raman shifts were consistent with the AFM and TEM results (Figures 1 and 2).…”
Section: ■ Results and Discussionsupporting
confidence: 87%
“…N-SLMoS 2 presented a higher A 1 g / E 2 g 1 ratio (2.11) than P-SLMoS 2 (2.06), supporting a greater extent of disorder . The slight blueshift (approximately 1 cm –1 ) of E 2 g 1 and A 1 g shifts attributed to the strain from lattice distortion . The Raman shifts were consistent with the AFM and TEM results (Figures and ).…”
Section: Resultssupporting
confidence: 83%
“…The samples are fitted at 1.8, 2.0 and 2.2 eV, which correspond to the A-trions, A-exciton and B-exciton of MoS 2 PL emission, respectively. 21,47 The A-exciton and B-exciton are associated with the excitonic transition at the K -point of the Brillouin zone. Meanwhile, the A-trion peak was attributed to the transition resulting from charge impurities in the MoS 2 layer.…”
Section: Resultsmentioning
confidence: 99%
“…Meanwhile, the direct band gap of single or few layers thick MoS 2 exhibit a peak at 1.8-1.9 eV, which makes it a highly suitable semiconductor oxide to be activated within the visible light region [20]. Moreover, with such a narrow band gap, MoS 2 possess a rapid transfer of charge carriers along with a wide absorption in the range of visible light, making it as a promising and valuable photocatalyst candidate [20,21].…”
Section: Introductionmentioning
confidence: 99%
“…There, the integral ratio of E 2g /A 1g , denoted as I (E 2g )/ I (A 1g ), is always used to monitor the change of interlayer bonding as the thickness of the 2D materials is decreased. It has been found that there is a good linear relationship between the I (E 2g )/ I (A 1g ) ratio and the number of layers in few‐layered TaSe 2 , MoS 2 , and WSe 2 . It then becomes a reliable strategy to estimate the number of layers of these 2D materials, including graphene .…”
mentioning
confidence: 99%