Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Razeghi, Manijeh; Dehzangi, Arash; Wu, Donghai; McClintock, Ryan P; Zhang, Yiyun; Durlin, Quentin; Li, Jiakai; Meng, Fanfei

doi:10.1117/12.2521173

Cited by 25 publications

(17 citation statements)

References 46 publications

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“…Collected data of dark current density versus cut‐off wavelength in the MWIR regime at two different temperature ranges a) from 70 to 99 K and b) from 150 to 170 K for barrier Ga‐free, [ 22,57,82,83,129,144–148,160–163,166,192,223,224 ] nonbarrier Ga‐free, [ 118,130,167,220–222,225 ] barrier Ga‐based, [ 87,149,168,170,172,174–176,183,193,219,226–228 ] and nonbarrier Ga‐based [ 68,101,108,111,173,177–179,181,189,215–218,229–237 ] T2SL PDs in comparison with “Rule 07.”…”

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

“…As a result, a low V/III flux ratio and high trimethylantimony (TMSb)/(TMSb+AsH 3 ) mole fraction is necessary to achieve high Sb composition during InAsSb layer growth. [ 117 ] Razeghi et al [ 118 ] used diluted AsH 3 for the MOCVD growth of the InAsSb layer and pure AsH 3 for the InAs layer at a low V/III ratio to enhance Sb incorporation. Although significant work and progress have been made in the growth of InAs/GaSb and InAs/InAsSb T2SL materials and devices by MBE [ 102,116,119–123 ] and MOCVD, [ 107,124–130 ] growth of barrier structures is generally challenging because barrier structures usually contain Al‐material such as AlSb, AlAs, or AlAsSb, and Al‐containing materials are challenging to grow and susceptible to oxidation during both growth and processing stages.…”

Section: Fundamental Materials Properties Of the Type‐ii Superlatticementioning

confidence: 99%

“…Collected data of detectivity versus cut‐off wavelength at a) a low‐temperature range from 70 to 80 K and b) a high‐temperature range from 150 to 230 K for barrier Ga‐free, [ 57,129,144–146,160–166 ] nonbarrier Ga‐free, [ 118,130,167 ] barrier Ga‐based, [ 149,168–176 ] and nonbarrier Ga‐based [ 108,173,177–182 ] T2SL PDs.…”

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

See 2 more Smart Citations

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

Section: Fundamental Materials Properties Of the Type‐ii Superlatticementioning

confidence: 99%

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

See 1 more Smart Citation

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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“…As one of the effective methods, the empirical tight-binding method (ETBM) was implemented to calculate the band structure and cut-off wavelength of the superlattice structure [14]. The type II staggered gap band alignment of the superlattice structure was able to deliver excellent infrared detection with its flexible band structure engineering capabilities using different combinations and compositions of Antimony-based structures such as InAs/GaSb/AlSb or InAs/InAsSb [15][16][17][18][19]. So far, several designs based on superlattice structure were implemented for different types of high gain devices [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Avalanche Photodetector Based on InAs/InSb Superlattice

Dehzangi

Gautam

et al. 2020

Quantum Reports

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This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate. The device exhibits a 100 % cut-off wavelength of 4.6 µm at 150 K and 4.30 µm at 77 K. At 150 and 77 K, the device responsivity reaches peak values of 2.49 and 2.32 A/W at 3.75 µm under −1.0 V applied bias, respectively. The device reveals an electron dominated avalanching mechanism with a gain value of 6 at 150 K and 7.4 at 77 K which was observed under −6.5 V bias voltage. The gain value was measured at different temperatures and different diode sizes. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device.

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“…Mid-wavelength infrared (MWIR) photodetectors which can operate under the low flux conditions are of great interest for long-range military and astronomical applications. [1,2] In most of these applications there is a need to increase the capability of the system to detect light in a low photon flux situation. Therefore, gain-based devices such as heterojunction phototransistors (HPTs) and avalanche photodiodes (APDs) are used to achieve the necessary photoresponse when the incoming photon flux is low.…”

mentioning

confidence: 99%

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

Li¹,

Dehzangi²,

Brown³

et al. 2021

Preprint

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This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

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Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Cited by 25 publications

References 46 publications

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Avalanche Photodetector Based on InAs/InSb Superlattice

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

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