Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

Shibahara, Kentaro; Ishikawa, Y.; Onimatu, D.; Maeda, Naoki; Mineji, A.; Kagawa, Keiichiro; Matuno, A.; Nire, Takashi

doi:10.7567/ssdm.2001.lb-2-2

Cited by 4 publications

(8 citation statements)

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“…Concerning residual defects, we have observed a relatively high density of stacking faults in the non-heat-assist LA specimen [10]. Too-fast recrystallization from the melt phase due to nanosecond-order heating is a considerable origin of defect formation.…”

Section: Nm Junction Formation With Pmlamentioning

confidence: 80%

“…Irradiation of 600 mJ/cm 2 was carried out without heat assist. A selective a-Si melt, in other words LTP, occurs under this condition [7], [8], and [10]. The gate electrode on the active regions did not suffer from deformation.…”

Section: Fundamental Merits Of Halamentioning

confidence: 86%

“…to obtain a low-enough sheet resistance [10]. Thus, to obtain a large-enough irradiation area, E L reduction is demanded.…”

Section: Fundamental Merits Of Halamentioning

confidence: 99%

“…In other words, HALA at 450 • C with E L of 300 mJ/cm 2 is an example of PMLA. If this is the case, the shallower peak is a pileup peak formed by Sb segregation to the melt phase [10] during resolidification after a-Si melting. The deeper peak is probably located just below the bottom of the shrunk a-Si layer.…”

Section: Proposal Of Pmlamentioning

confidence: 99%

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Merits of heat assist for melt laser annealing

Shibahara

Eto

Kurobe

2006

IEEE Trans. Electron Devices

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In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a negligibly small diffusion at this region. A high activation rate is achievable by melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n + /p and p + /n junctions. These results imply that PMLA is applicable for much shallower junction formation.

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Section: Nm Junction Formation With Pmlamentioning

confidence: 80%

Section: Fundamental Merits Of Halamentioning

confidence: 86%

“…to obtain a low-enough sheet resistance [10]. Thus, to obtain a large-enough irradiation area, E L reduction is demanded.…”

Section: Fundamental Merits Of Halamentioning

confidence: 99%

Section: Proposal Of Pmlamentioning

confidence: 99%

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Merits of heat assist for melt laser annealing

Shibahara

Eto

Kurobe

2006

IEEE Trans. Electron Devices

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“…The Si surface is known to be amorphized by this implantation. 7) The amorphized Si (a-Si) layer was 11 nm thick, as measured from cross-sectional transmission electron microscopy (XTEM) images. T sub for heat-assisted LA was 250 to 525 C, and the annealing atmosphere was nitrogen.…”

Section: Methodsmentioning

confidence: 99%

Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n⁺/p Junctions by Heat-Assisted Excimer Laser Annealing

Kurobe

Ishikawa

Shibahara

2005

Jpn. J. Appl. Phys.

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Low-resistive ultrashallow n+/p junctions were formed with Sb as a dopant by heat-assisted laser annealing. A process window platted against laser energy density and substrate temperature was obtained in which the sheet resistance was about 500 Ω/sq. while the junction depth was maintained at about 20 nm, which was equal to that of the as implanted condition. Cross-sectional transmission electron microscopy (XTEM) images showed that substrate heating before laser irradiation enhanced recrystallization of the amorphized layer. This causes non melt laser annealing using the complete recrystallization of the amorphized layer. From current–voltage characteristics of n+/p diodes in the reverse direction, leakage current reduction accompanying the heat-assisted annealing was confirmed.

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Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As⁺ Implantation

Eto¹,

Shibahara²

2005

Jpn. J. Appl. Phys.

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The depth profiling of sub-keV As þ implantation for sub-10 nm junction formation was investigated. The tail slope of profiles measured by secondary ion mass spectrometry (SIMS) using 300 eV Cs þ was much gentler than that of simulated profiles. Model calculation considering the mixing effect due to Cs þ bombardment during SIMS measurement explained the SIMS tail well. This implies that accurate As depth profiling by simply lowering primary Cs þ energy is difficult because of ion gun limitations. At the surface region, a 1.4-nm-thick surface layer was found. This layer is considerably thick for the sub-10 nm junction and is thicker than 0.4 nm for 5 keV implantation.

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Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

Cited by 4 publications

References 1 publication

Merits of heat assist for melt laser annealing

Merits of heat assist for melt laser annealing

Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n⁺/p Junctions by Heat-Assisted Excimer Laser Annealing

Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As⁺ Implantation

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Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation

Cited by 4 publications

References 1 publication

Merits of heat assist for melt laser annealing

Merits of heat assist for melt laser annealing

Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n+/p Junctions by Heat-Assisted Excimer Laser Annealing

Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As+ Implantation

Contact Info

Product

Resources

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Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n⁺/p Junctions by Heat-Assisted Excimer Laser Annealing

Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As⁺ Implantation