Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

Cheek, G.; Genis, A. P.; DuBow, J.; Verneker, V. R. Pai

doi:10.1063/1.91184

Cited by 23 publications

(5 citation statements)

References 6 publications

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“…2 b and Supplementary Fig. 13b) [ 35 , 36 ]. Considering the fact that the fabrication of pyramid Si will introduce additional surface charge recombination [ 37 ], planer Si is adopted to form the n-Si MIS junction in this study.…”

Section: Resultsmentioning

confidence: 99%

Spatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting

Wang

Liu

et al. 2020

National Science Review

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Metal-insulator-semiconductor (MIS) photocathodes offer a simple alternative to p-n junction photocathodes in photoelectrochemical water splitting. However, the parasitic light absorption of catalysts and metal layers in MIS junction as well as the lack of low work function metals to form a large band offset with p-Si severely limit their performance. This paper describes a MIS photocathode fabricated from n-Si, rather than the commonly used p-Si, to spatially decouple light absorption from reaction sites, which enables the majority carriers, instead of the commonly used minority carriers, to drive the surface reaction, making it possible to place the reaction sites far away from the light absorption region. Thus, the catalysts could be moved to the backside of MIS junction to avoid light-shielding. Moreover, the adoption of n-Si unlocks a variety of high work function materials for photovoltage generation. The obtained n-Si MIS photocathode exhibits an applied bias photon-to-current efficiency of 10.26% with a stability up to 300 h.

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Section: Resultsmentioning

confidence: 99%

Spatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting

Wang

Liu

et al. 2020

National Science Review

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“…Because the optical properties of the oxide films are relative independent of film thickness, the electrical sheet resistance can be minimized by depositing a thick film. Although thick oxide films can solve some problems, the thicker film may need an additional anti-reflection coating to achieve lower reflection losses [26]. The MIS grating cell appears to be best considering these parameters.…”

Section: Caleulation Of the Effieie!iii!!fmentioning

confidence: 99%

MIS and SIS solar cells on polycrystalline silicon

Cheek¹,

Mertens

1980

Solar Cells

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Metal-Insulator-Semiconductor (MIS) and Semiconductor-Insulator-Semiconductor (SIS) structured solar cells have been considered a viable alternative to thermally diffused p-n junctions for use on polycrystalline thin-film silicon substrates. Early work indicated that thermal diffusion of a j~mction in polycrystalline silicon substrates could impose severe problems. Experimental investigations have shown that a p-n junction in polycrystalline silicon can have well behaved characteristics. The major efficiency loss mechanism, introduced by the presence of grain boundries, apparently does not come from the lower value of shunt resistance but from the additional recombination loss along the grain boundaries. This paper's purpose is to review the status of MIS and SIS solar cell technologies and assess the potential of these structures to meet low cost goals. Three major types of MIS/SIS solar cells are discussed in terms of structure, materials used in the fabrication, and the current collection under illumination~ The types of solar cells discussed include the thin metal MIS structure, the conducting oxide SIS structure, and the MIS inversion layer device. The specific advantages of a MIS/SIS solar cell are investigated by the use of theoretical calculations. The spectral response, short circuit current, open circuit voltage, fill factor, and cell efficiency have been calculated for the MIS/SIS case, the advanced diffused, and standard diffused solar cells. Several specific problem areas exist with these devices. The possible loss mechanisms in the MIS/SIS device are detailed, the cell stability and degradation mechanisms are identified, and the fabrication techniques amenable to large scale use are discussed. A major conclusion of the paper is that the MIS/SIS solar cells have no apparent advantage over diffused p-n junctions.

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“…These properties make them suitable for application in solar absorbers (Fan et al 1974), for they minimize emittance. The optical refractive indices of these coatings are such that they act as antireflection coatings for Si, GaAs and Ge (Chambouleyron and Saucedo 1979;Cheek et al 1979). Low resistive films of these transparent conductors are therefore suitable for use as top conducting layers in solar cells such as SnO2/Si, rro/Si etc.…”

Section: Introductionmentioning

confidence: 99%

SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material

et al. 1986

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Highly transparent and highly conducting films of SnO2 : F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2.5 lit. min-~ flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1.02 wt ~o-The Hall experiment showed that the films prepared at optimum conditions had high carrier concentration and high mobility.

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Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

Cited by 23 publications

References 6 publications

Spatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting

Spatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting

MIS and SIS solar cells on polycrystalline silicon

SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material

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