Sr Ru O 3 (SRO) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition method. In order to fully exploit the correlation between their properties and the partial (working) pressures of oxygen in which they are grown, a wide range of pressures—from 0.1to300mTorr—was investigated. SRO ablation plumes showed a shape transition from forward directed to confined isotropic at 60mTorr. Also, all measured properties of SRO films displayed significant changes at 60mTorr. Out-of-plane lattice constants and strains of SRO films were quite large for low-pressure growth (up to 10mTorr), but became notably minimized at 60mTorr and continued to change gradually with further pressure increases. Ru deficiencies seemed to occur regardless of working pressure value. The island growth mode was dominant for low pressures up to 10mTorr, followed by the step flow growth mode at 60mTorr and step flow plus two-dimensional growth at 200mTorr, reverting then back into island growth at 300mTorr. Only those SRO films exhibiting the step flow growth mode showed a high TC. The correlation between oxygen pressure and film properties is discussed in terms of strain and compositional effects.

Magnetic anisotropy of pure and substituted laser-ablated SrRuO3 and SrRu0.9Cr0.1O3 thin films has been studied by rotational magnetization experiments in a superconducting quantum interference device (SQUID) magnetometer. The magnetic easy axis for epitaxial (single domain) SrRuO3 and SrRu0.92O3 thin films lies in the (001) plane and is tilted away from the normal to the surface by 23°-26°. Its direction lies between the [110] and [010] axes. For the lower oxygen pressure grown SrRuO3 thin film, which consists of intertwined crystal nanodomains the magnetic easy axis is no longer locked-in to the (001) plane but is oriented closer to the normal to the surface that is the resultant orientation of easy axes for different domains. Similar effect is observed in single-domain SrRu0.9Cr0.1O3 thin film with random Cr substitution on the RuO6 octahedra. A role of ruthenium deficiency observed in all the studied thin films is also discussed.

Geometrical anisotropy axes of diverse SrRuO3 (SRO) films grown by random and directional two-dimensional and step flow modes are determined and their characteristic angular magnetizations are understood in terms of growth mode induced structural effects. Two-dimensional SRO films possess single-crystal-like structural qualities. Angular magnetization measurements show sharp minima and indicate the films’ easy axis to be in the [310] direction. In contrast, examination of step flow SRO films shows the presence of degenerate multiple in-plane domains and the anisotropy axis in a direction close to [110] even though directional surface steps are clearly visible.

Efficient indium tin oxide (ITO)/polycrystalline silicon heterojunction solar cells have been fabricated utilizing neutralized ion-beam sputtering techniques. These cells were fabricated on single-pass float-zone-refined silicon. Conversion efficiencies of 6.25% under AM1 illumination have been observed. Cells were analyzed by I-V characteristics and a scanning laser photoresponse technique. Qualitative minority-carrier lifetime has been mapped using the EBIC mode of a SEM. This has revealed a reduced photoresponse at the grain boundaries independent of grain size, and also at defect clusters within individual grains. Surface blemishes and etch pits are not important in reducing the cell photoresponse. It appears that the low-temperature processing inherent in semiconductor-insulator-semiconductor solar cells is applicable to polycrystalline material.

Using neutralized-ion-beam sputtering, high-efficiency (10.94%, AM1) and large-area (total area, 11.46 cm2) indium tin oxide/polycrystalline silicon semiconductor-insulator-semiconductor solar cells have been fabricated. The important steps in the fabrication are the proper surface preparation and the incorporation of hydrogen during milling and oxidation of the substrate. The photovoltaic conversion parameters were Voc =0.526 V, Jsc =27.39 mA/cm2, and FF=0.759.