Efficient indium tin oxide/polycrystalline silicon semiconductor-insulator-semiconductor solar cells

Abstract

Using neutralized-ion-beam sputtering, high-efficiency (10.94%, AM1) and large-area (total area, 11.46 cm2) indium tin oxide/polycrystalline silicon semiconductor-insulator-semiconductor solar cells have been fabricated. The important steps in the fabrication are the proper surface preparation and the incorporation of hydrogen during milling and oxidation of the substrate. The photovoltaic conversion parameters were Voc =0.526 V, Jsc =27.39 mA/cm2, and FF=0.759.

Efficient ITO–Si solar cells and power modules fabricated with a low temperature technology: Results and perspectives

“…Under the AM0 and AM2 illumination conditions, the efficiency is 10.8% and 12.2%, respectively. Our results presented an improved efficiency in comparison to those published in [1][2][3][4], where the reported conversion efficiency was 10-11%. Our calculations based on a p + -n model show an excellent coincidence between the theoretical and the experimental results.…”

“…For several years a new class of photovoltaic devices, namely the semiconductor-insulator-semiconductor (SIS) solar cells, has emerged [1][2][3][4][5]. The top layer of these diodes is fabricated with a compound indium-tin oxide (ITO).…”

Improvement of 〈indium-tin-oxide/silicon oxide/n-Si〉 junction solar cell characteristics by cyanide treatment

“…͗Indium-tin-oxide ͑ITO͒/silicon oxide/Si͘ junction solar cells are among the candidates for high-efficiency and lowcost solar cells, [1][2][3][4][5][6][7][8] because the fabrication of solar cells requires only the deposition of the ITO film on the Si substrate by spray pyrolysis. Employing the spray method, the ITO films can be formed with a high rate (ϳ100 nm/min) by use of a very simple and low-cost apparatus.…”

Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

“…The charge carrier dividing junction (p-n or Schottky type) can be applied in a radial [23,24] or axial [25,26] concept inside the NWs and a possible solution is also the wrapping of NWs with a second material [27]. In this work, we used a semiconductor-insulator-semiconductor (SIS) heterojunction solar cell concept that has already been developed in the 1970s [28][29][30]. Therefore, the complex SiNW structure is uniformly coated with a very thin tunneling barrier and a thicker layer of aluminum (Al) doped zinc oxide (ZnO) as a second, transparent wide band gap, degenerately doped semiconductor.…”