Apparatus for low temperature thermal desorption spectroscopy of portable samples

Abstract

An experimental setup for low temperature thermal desorption spectroscopy (TDS) integrated in an ultrahigh vacuum-chamber housing a high-end scanning probe microscope for comprehensive multi-tool surface science analysis is described. This setup enables the characterization with TDS at low temperatures (T > 22 K) of portable sample designs, as is the case for scanning probe optimized setups or high-throughput experiments. This combination of techniques allows a direct correlation between surface morphology, local spectroscopy, and reactivity of model catalysts. The performance of the multi-tool setup is illustrated by measurements of a model catalyst. TDS of CO from Mo(001) and from Mo(001) supported MgO thin films were carried out and combined with scanning tunneling microscopy measurements.

Interaction of water and carbon monoxide with MnO(001) thin films on Au(111)

“…The observed IRAS bands and TDS peaks were analyzed as a function of water exposure and sample annealing temperature to clarify the binding nature of the water species. 13,14 To obtain more insight into active sites at the film surface and surface termination, we performed IRAS and TDS studies using CO as a probe molecule and also CO/water co-adsorption experiments. Adsorption of CO has previously been employed to chemically characterize a large number of oxide surface systems, such as Fe 3 O 4 (111), 15,16 Co 3 O 4 (111), 17 and MgO 18,19 surfaces, and also MnO surfaces, namely, those grown on Au(111), 20 Pt(111), 21 and Rh(100).…”

A new thermo-desorption laser-heating setup for studying noble gas diffusion and release from materials at high temperatures

“…Thermo-desorption spectrometry (TDS) [1][2][3][4][5][6] is a key technique to study as a function of a given heat treatment the release of volatile elements from a material, possibly down to trace levels . In the cases of noble gases (He, Ne, Ar, Kr and Xe), it is particularly convenient to determine characteristic temperatures of gas release [6][7][8][9][12][13][14][15][18][19][20], to deduce elemental diffusion kinetics and characteristics (i.e.…”

Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF6/O2 plasma

“…[13][14][15][16][17] An etched wafer sample was placed in an evacuated reactor, and XeF 2 gas was introduced to the reactor for 30 s while the pressure was gradually increased to about 133 Pa. During this procedure, the sidewall with a thin film with poor etch tolerance could be etched by F atoms. Thermal desorption spectroscopy (TDS) 18,19) was also carried out on etched samples to evaluate the amount of F-and Br-containing species in the sidewall film deposited during etching.…”