Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

Jiang, Shaolong; Zhang, Zhepeng; Zhang, Na; Huan, Yahuan; Gong, Yue; Sun, Mengxing; Shi, Jianping; Xie, Chunyu; Yang, Pengfei; Fang, Qiyi; Li, He; Tong, Lianming; Xie, Dan; Gu, Lin; Liu, Porun; Zhang, Yanfeng

doi:10.1007/s12274-017-1796-8

Cited by 72 publications

(46 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This claim was consistent with the absence of graphene peak in the XRD pattern of the ReSe 2 @rGO sample . The Eg and Ag‐like peaks of the ReSe 2 were also detected at 125 and 160 cm −1 , respectively …”

supporting

confidence: 87%

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Yang

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

An effective route is developed to fabricate ultrathin rhenium diselenide (ReSe2) nanosheets anchored on reduced graphene oxide (rGO) nanoflakes (ReSe2@rGO). When the ReSe2@rGO is used as an anode material in the potassium‐ion batteries (PIBs), the graphene offers a conductive matrix to buffer the volume alteration during repeated K+ insertion/extraction cycles. The stable interfacial connection between ReSe2 and graphene greatly promotes the integration of the active ReSe2 nanosheets, preventing their agglomeration. At the same time, these ultrathin nanosheets shorten the ion/electron diffusion path, leading to stable cyclic performance. As a result, the ReSe2@rGO anode enhances the electrochemical performance of the as‐synthesized PIB with a high specific capacity of over 250 mAh g−1 at a current density of 500 mA g−1 even after 200 cycles. Excellent rate performance and lengthy cyclic performance with 150 mAh g−1 at 2 A g−1 are also observed even after 500 cycles.

show abstract

supporting

confidence: 87%

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Yang

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…The electrical performance of the FETs was measured at room temperature in vacuum (<10 −4 Pa) and the ReSe 2 devices exhibited n‐type conduction with an on/off current ratio up to 10 5 (Figure B). The electron mobility of the ReSe 2 device shown in Figure B was estimated to be ∼5.0 cm 2 V −1 s −1 , which is comparable to the mechanically‐exfoliated flakes and superior to CVD‐grown ReSe 2 (Figure C,D), confirming the very high quality of our CVT‐grown samples. The improvement of the mobility can be attributed to the use of Re and Se powder as source materials and the slow growth process under high temperature and high vacuum in comparison with conventional CVD growth.…”

Section: Resultssupporting

confidence: 62%

“…However, the fundamental investigations and the fabrication of proof-of-concept devices on ReSe 2 are highly-relied on 2D flakes mechanically exfoliated from the bulk crystals synthesized via chemical vapor transport (CVT) [5][6][7] method, which does not allow for the controllable and high-throughput preparation. Recently, the direct synthesis of 2D ReSe 2 has been explored through chemical vapor deposition (CVD), 1,[8][9][10][11] however, the mobility of the CVD-grown samples is obviously lower than their mechanically exfoliated counterparts 1,2,8-10 (0.25 cm 2 V −1 s −1 vs 4 cm 2 V −1 s −1 ). Therefore, a controllable approach which is capable of growing 2D ReSe 2 flakes with comparable quality to the mechanically exfoliated ones is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Highly crystalline ReSe₂ atomic layers synthesized by chemical vapor transport

Lü

Yan

Zheng

et al. 2019

InfoMat

View full text Add to dashboard Cite

Two‐dimensional (2D) anisotropic rhenium diselenide (ReSe2) has attracted lots of attention due to its promising applications in electronics and optoelectronics. However, controlled synthesis of high quality ultrathin ReSe2 remains as a challenge. Here we developed an approach for synthesizing high quality 2D ReSe2 flakes with a thickness down to monolayer by chemical vapor transport (CVT) through carefully tuning the growth kinetics. The atomic structures and anisotropy of the obtained ReSe2 flakes were intensively characterized with scanning transmission electron microscope and angle‐resolved polarized Raman spectroscopy. Field‐effect transistors fabricated on the CVT‐grown ReSe2 flakes showed n‐type semiconducting behavior with an on/off current ratio of 105 and a mobility up to ∼5 cm2 V−1 s−1, which is comparable to mechanically exfoliated flakes and is obvious higher than the samples synthesized with other approaches. This study not only make high quality 2D ReSe2 easily accessible for both fundamental and application explorations but also sheds new lights on the chemical synthesis of other anisotropic 2D materials.

show abstract

“…As one type of counterpart, low‐symmetry 2D materials (such as ReS 2 , ReSe 2 , GaTe, and 1T′ MoTe 2 ) which are distinctly different from high‐symmetry 2D materials, would provide colossal opportunities to explore novel GB structures and properties. ReS 2 , for example, forms a distorted octahedral (1T′) structure with triclinic symmetry as a result of charge decoupling from the extravalence electron of the Re atom .…”

Section: Introductionmentioning

confidence: 99%

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂

Wang

Hong

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Grain boundaries (GBs) significantly affect the electrical, optical, magnetic, and mechanical properties of 2D materials. An anisotropic 2D material like ReS 2 provides unprecedented opportunities to explore novel GB properties, since the reduced lattice symmetry offers greater degrees of freedom to build new GB structures. Here the atomic structure and formation mechanism of unusual multidomain and diverse GB structures in the vapor phase synthesized ReS 2 atomic layers are reported. Using high-resolution electron microscopy, two major categories of GBs are observed in each ReS 2 domain, namely, the joint GB including three structures, and the GBs formed from a reconstruction of Re4-chains including seven different structures. Based on the experimental observations, a novel "nanoassembly growth model" is proposed to elucidate the growth process of ReS 2 , where three types of Re4-chain reconstruction give rise to a multidomain structure. Moreover, it is shown that by controlling the thermodynamics of the growth process, the structure and density of GB in the ReS 2 domain can be tailored. First-principles calculations point to interesting new properties resulting from such GBs, such as a new electron state or ferromagnetism, which are highly sought after in the construction of novel 2D devices.

show abstract

Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

Cited by 72 publications

References 37 publications

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Highly crystalline ReSe₂ atomic layers synthesized by chemical vapor transport

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂

Contact Info

Product

Resources

About

Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

Cited by 72 publications

References 37 publications

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Rhenium Diselenide Anchored on Reduced Graphene Oxide as Anode with Cyclic Stability for Potassium‐Ion Battery

Highly crystalline ReSe2 atomic layers synthesized by chemical vapor transport

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS2

Contact Info

Product

Resources

About

Highly crystalline ReSe₂ atomic layers synthesized by chemical vapor transport

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂