Application of p–i–n photodiodes to charged particle fluence measurements beyond <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml10" display="inline" overflow="scroll" altimg="si10.gif"><mml:mn>1</mml:mn><mml:msup><mml:mrow><mml:mn>0</mml:mn></mml:mrow><mml:mrow><mml:mn>15</mml:mn></mml:mrow></mml:msup></mml:math> 1-MeV-neutron-equivalent/cm<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml11" display="inline" overflow="scroll" altimg="si11.gif"><mml:msup><mml:mrow/><mml:mrow>

Hoeferkamp, M. R.; Grummer, A.; Rajen, I.; Seidel, S. C.

doi:10.1016/j.nima.2018.02.070

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…As is described in Ref. [1], above fluences of 4 × 10 15 neq, the linear relationship between applied fluence and measured forwarded voltage ceases to hold for the p-i-n diodes.…”

Section: The Cooling Systemmentioning

confidence: 62%

“…P-i-n diodes of the type BPW34F by OSRAM have the property that their forward voltage increases linearly with fluence when supplied by a constant forward current. For current amplitude 1 mA and pulse width 50 ms or less, the linear regime in forward voltage versus fluence spans the range from approximately 2 × 10 12 neq/cm 2 to approximately 4 × 10 15 neq/cm 2 [1]. The default configuration is a 7×7 array of 49 diodes on a pitch of 3.8 mm, covering an area of 2.5 square centimeters.…”

Section: P-i-n Diodesmentioning

confidence: 99%

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An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

Hoeferkamp¹,

Wickramasinghe²,

Grummer³

et al. 2020

J. Inst.

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An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times 10 16 1-MeV-neutron-equivalent/cm 2 (neq). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.

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“…As is described in Ref. [1], above fluences of 4 × 10 15 neq, the linear relationship between applied fluence and measured forwarded voltage ceases to hold for the p-i-n diodes.…”

Section: The Cooling Systemmentioning

confidence: 62%

Section: P-i-n Diodesmentioning

confidence: 99%

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

Hoeferkamp¹,

Wickramasinghe²,

Grummer³

et al. 2020

J. Inst.

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Investigation of low gain avalanche detectors exposed to proton fluences beyond 10¹⁵ n _eq cm^-2

Sorenson,

Hoeferkamp,

Kramberger

et al. 2024

J. Inst.

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Low gain avalanche detectors (LGADs) deliver excellent timing resolution, which can mitigate mis-assignment of vertices associated with pileup at the High Luminosity LHC and other future hadron colliders. The most highly irradiated LGADs will be subject to 2.5 × 1015 n eq cm-2 of hadronic fluence during HL-LHC operation; their performance must tolerate this. Hamamatsu Photonics K.K. and Fondazione Bruno Kessler LGADs have been irradiated with 400 and 500 MeV protons respectively in several steps up to 1.5 × 1015 n eq cm-2. Measurements of the acceptor removal constants of the gain layers, evolution of the timing resolution and charge collection with damage, and inter-channel isolation characteristics, for a variety of design options, are presented here.

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Electron Beam Loss Monitor of Areal Accelerator Based on Pin-Photodiodes

Arutyunyan,

Margaryan,

Lazareva

et al. 2023

J. Contemp. Phys.

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Application of p–i–n photodiodes to charged particle fluence measurements beyond 1015 1-MeV-neutron-equivalent/cm

Cited by 4 publications

References 6 publications

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10¹⁵ n _eq cm^-2

Electron Beam Loss Monitor of Areal Accelerator Based on Pin-Photodiodes

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Application of p–i–n photodiodes to charged particle fluence measurements beyond 1015 1-MeV-neutron-equivalent/cm

Cited by 4 publications

References 6 publications

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 1016 neq/cm2

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 1016 neq/cm2

Investigation of low gain avalanche detectors exposed to proton fluences beyond 1015 n eq cm-2

Electron Beam Loss Monitor of Areal Accelerator Based on Pin-Photodiodes

Contact Info

Product

Resources

About

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 10¹⁶ n_eq/cm²

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10¹⁵ n _eq cm^-2