2020
DOI: 10.1016/j.ultsonch.2020.105186
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Application of sonochemically synthesized SnS and SnS2 in the electro-Fenton process: Kinetics and enhanced decolorization

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Cited by 19 publications
(10 citation statements)
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“…Moreover, the binding energies at 486.5 and 495.0 eV correspond to 3d 5/2 and 3d 3/2, respectively, in Sn 3d spectrum, indicating the presence of a reduction state of Sn 3 + . [25][26][27][28] The binding energy difference between Sn 3d 5/2 and Sn 3d 3/2 is 8.4 eV, which was identical to results reported by Avellaneda et al [27] The highresolution S 2p spectrum of the S-2 sample can be split into two peaks at 161.4 and 162.6 eV, corresponding to S 2p 3/2 and S 2p 1/2 , respectively, suggesting the existence of S 1.5À in the sample. [25][26][27][28] Morphologies and microstructures of these samples were studied by SEM.…”
Section: Resultssupporting
confidence: 87%
“…Moreover, the binding energies at 486.5 and 495.0 eV correspond to 3d 5/2 and 3d 3/2, respectively, in Sn 3d spectrum, indicating the presence of a reduction state of Sn 3 + . [25][26][27][28] The binding energy difference between Sn 3d 5/2 and Sn 3d 3/2 is 8.4 eV, which was identical to results reported by Avellaneda et al [27] The highresolution S 2p spectrum of the S-2 sample can be split into two peaks at 161.4 and 162.6 eV, corresponding to S 2p 3/2 and S 2p 1/2 , respectively, suggesting the existence of S 1.5À in the sample. [25][26][27][28] Morphologies and microstructures of these samples were studied by SEM.…”
Section: Resultssupporting
confidence: 87%
“…The peak splitting energy of Sn 3d 5/2 and Sn 3d 3/2 levels was approximately 8.3 eV. The binding energies of Sn 3d doublets and their spin energy separations were similar to the values reported [33]. A complete spectrum of the S 2p core level revealed two peaks with binding energies of 162.5 eV and 161.2 eV, which correspond to the S 2p 5/2 and S 2p 3/2 energy levels of S atoms in the Sn 2− valence state, respectively, which is consistent with the energies of the S 2− -Sn 4+ bond, confirming the presence of a single-phase SnS 2 in the synthesized nanoparticles [34].…”
Section: Elemental Purity Confirmation Of Sns 2 Nanoparticlessupporting
confidence: 85%
“…This kind of recombination loss may decrease with the increasing SnS 2 thickness. According to a previous report [33], the increase in the thickness of the CdS buffer layer resulted in increased light absorption loss by CdS, but decreased reflection loss. Therefore, SnS 2 thickness optimization is necessary to minimize the photocurrent loss by recombination to ensure the quality of the CIGS/SnS 2 junction and to improve the performance characteristics of the CIGS SnS2 device.…”
Section: Sns 2 Thin Film As a Buffer In Cigs Solar Cellmentioning
confidence: 81%
“…The de‐convoluted XPS data of SnS sample is well supported with the previous literature. [ 17,28,29 ]…”
Section: Figurementioning
confidence: 99%
“…The de-convoluted XPS data of SnS sample is well supported with the previous literature. [17,28,29] The electronic band structure of monolayer, bilayer, and trilayer SnS were obtained using density functional theory (DFT) calculations (see Note 7, Supporting Information). In the context of this study, we intend to gain insights into photocurrent generation in SnS.…”
mentioning
confidence: 99%