Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

Izumi, Satoshi; Miyake, Takao; Sakai, Shinsuke; Ohta, Hiroyuki

doi:10.1016/j.msea.2004.12.001

Cited by 15 publications

(8 citation statements)

References 25 publications

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“…These formed dislocations and defects are sources of leakage current which deteriorates transistor performances ( Fig. 1(a) [30]). In the pillar-shape MOSFET of this paper as well, similar stresses are applied to the pillar structure, and as a result, it was predicted that dislocations and stacking faults occur inside the pillar.…”

Section: A Hypothesis Of the Si Emissionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1.0×1018 atoms/cm 3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1.0×1017 atoms/cm 3 . The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.

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Section: A Hypothesis Of the Si Emissionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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show abstract

“…Selective epitaxy by STI is a well-known example for alignments, which is widely used in high volume manufacturing of integrated circuits (ICs) [82][83][84][115][116][117][118][119][120][121][122]. During IC fabrication, STI was created before the deposition of high mobility materials.…”

Section: Dielectric-based Alignmentmentioning

confidence: 99%

Atomic level deposition to extend Moore’s law and beyond

Chen

Cai

et al. 2020

Int. J. Extrem. Manuf.

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In the past decades, Moore’s law drives the semiconductor industry to continuously shrink the critical size of transistors down to 7 nm. As transistors further downscaling to smaller sizes, the law reaches its limitation, and the increase of transistors density on the chip decelerates. Up to now, extreme ultraviolet lithography has been used in some key steps, and it is facing alignment precision and high costs for high-volume manufacturing. Meanwhile, the introduction of new materials and 3D complex structures brings serious challenges for top-down methods. Thus, bottom-up schemes are believed to be necessary methods combined with the top-down processes. In this article, atomic level deposition methods are reviewed and categorized to extend Moore’s law and beyond. Firstly, the deposition brings lateral angstrom resolution to the vertical direction as well as top-down etching, such as double patterning, transfer of nanowires, deposition of nanotubes, and so on. Secondly, various template-assisted selective deposition methods including dielectric templates, inhibitors and correction steps have been utilized for the alignment of 3D complex structures. Higher resolution can be achieved by inherently selective deposition, and the underlying selective mechanism is discussed. Finally, the requirements for higher precision and efficiency manufacturing are also discussed, including the equipment, integration processes, scale-up issues, etc. The article reviews low dimensional manufacturing and integration of 3D complex structures for the extension of Moore’s law in semiconductor fields, and emerging fields including but not limited to energy, catalysis, sensor and biomedicals.

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“…However, systems with and without SSFs have different amounts of free energy due to the QWA mechanism, and this difference does not fully explain the evolution of SSFs dependent on only the applied stress. Recently, dislocation theory [11][12][13][14][15][16] has been applied to predict plastic deformation considering the dislocation motion in microstructures using, for example, discrete dislocation dynamics (DDD). These works have described the longrange elastic interaction using the Peach-Koehler equation 17) as a continuum model and also have modeled the strong nonlinear short-range interactions phenomenologically as a rate process.…”

Section: Introductionmentioning

confidence: 99%

Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device

Kano,

Hirohata,

Kato

et al. 2023

Jpn. J. Appl. Phys.

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The reliability of 4H-SiC bipolar devices is compromised by the expansion of single Shockley stacking faults (SSFs) during forward-current operation. Because SSF expansion is governed by multiphysical aspects, including electrical, thermal, and stress states, analysis of the mounted structure is important for improving power module design. We propose a practical design method that analyzes the critical condition due to SSF expansion using a combined method with a multiphysical finite element method (FEM) and phase field (PF) model based on the time-dependent Ginzburg-Landau (GL) equation. In preliminary studies, the thermal deformation of the demonstration module and the variation of threshold current of a bar-shaped SSF were verified from experimental and reference data. Estimating the SSF expansion rate on the constructed response surface under the mutiphysical inputs from FEM, the proposed design method can be used effectively in the design process by changing the various design variables.

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Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

Cited by 15 publications

References 25 publications

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Atomic level deposition to extend Moore’s law and beyond

Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device

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