Application of various optical techniques for ESD defect localization

Essely, Fabien; Darracq, Frédéric; Pouget, Vincent; Remmach, Mustapha; Beaudoin, Félix; Guitard, Nicolas; Bafleur, Marise; Perdu, Philippe; Touboul, A.; Lewis, Dean

doi:10.1016/j.microrel.2006.07.021

Cited by 8 publications

(4 citation statements)

References 7 publications

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“…The infrared-optical beam induced resistance change (IR-OBIRCH) [1][2][3] method is widely used to localize faults on metal wires of semiconductor devices. [4][5][6][7][8][9][10] In the IR-OBIRCH, the faults are localized by observing current changes induced by laser heating. [11][12][13] Since, in general, the mold resin is not optically transparent and it disturbs the propagation of laser, the IR-OBIRCH method often requires a decapsulation of mold resin prior to the localization of the faults.…”

Section: Introductionmentioning

confidence: 99%

Frequency determination in nondestructive test of semiconductor devices with ultrasound heating

Matsui

Tatsumi

Kawashima

et al. 2020

Jpn. J. Appl. Phys.

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The infrared-optical beam induced resistance change (IR-OBIRCH) method is widely used to localize faults of semiconductor devices. Prior to the fault localization, the IR-OBIRCH generally requires a decapsulation of mold resin that covers the semiconductor devices. As an alternative, without the need for decapsulation, the authors propose the ultrasonic beam induced resistance change (SOBIRCH) method. This research examined a determination method of the optimal ultrasound frequency in order to improve the signal intensity of SOBIRCH even if the speed of sound and the thickness of mold resin are unknown. The resonant frequency estimated by using frequency component of signals of reflected wave agreed with the ultrasound frequency that maximized the intensity of SOBIRCH signal. The frequency dependence of SOBIRCH signal was also estimated. This research demonstrated that the proposed frequency determination method can estimate the resonant frequency on the fault observation of a practical device.

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Section: Introductionmentioning

confidence: 99%

Frequency determination in nondestructive test of semiconductor devices with ultrasound heating

Matsui

Tatsumi

Kawashima

et al. 2020

Jpn. J. Appl. Phys.

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“…In order to retain and upgrade the reliability of semiconductor devices, failure analysis is often carried out to identify the causes of faults in the semiconductor devices. In the failure analysis, the optical beam induced resistance change (OBIRCH) [1][2][3] method is recognized as a powerful technique to localize the faults of metal interconnections [4][5][6][7][8][9][10] in a semiconductor device.…”

Section: Introductionmentioning

confidence: 99%

Ultrasonic beam induced resistance change (SOBIRCH) method for failure analysis of semiconductor devices encapsulated by mold resin

Matsui

Tatsumi

Kawashima

et al. 2019

Jpn. J. Appl. Phys.

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In the process of the failure analysis for semiconductor devices, various optical methods are applied as techniques to localize faults of the semiconductor devices. Conventional optical techniques often require the decapsulation of the mold resin, since the mold resin is not optically transparent. As a new fault localization technique requiring no decapsulation, the authors are proposing the ultrasonic beam induced resistance change (SOBIRCH) method based on a heating by focused ultrasonic beam. In this report, the signal intensity of the SOBIRCH method for the capsulated samples was discussed through the experimental and the theoretical approaches. By comparing the experiment and the numerical analysis, it was suggested that a certain thickness of the thin mold resin can enhance the intensity of the SOBIRCH signal. Additionally, an expected effect of the standing wave in the thin mold resin was calculated, and a method to make use of the standing wave was proposed.

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“…However, owing to thin gate insulator, high pattern density and high pixel per inch (ppi), electrostatic discharge (ESD) becomes a critical issue in LTPS TFTs more than (a-Si:H) TFTs [2]. Despite of many electrical problems in advanced display panels, an electrostatic discharge (ESD) phenomenon and results of failure analysis in panels have been scarcely reported, whereas many ESD analyses and methods introduced in semiconductor industry [3][4][5]. Focused ion beam (FIB) and photon emission microscopy (EMMI) are used to find out defect locations in semiconductor industry.…”

Section: Introductionmentioning

confidence: 99%

Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

Kim¹,

Lim²,

Jung³

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Optical microscope and FIB were widely used to find out defect locations in display panels. But failure analysis of LTPS TFTs is getting more difficult to detect the locations than that of (a-Si:H) TFTs. We adopted FIB and EMMI tool and found the leakage path on some special function failure such as line defect in display panel. Analysis results would help to find out defects and improve the yield by introducing right analysis method of FIB/EMMI tools in display panels.

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Application of various optical techniques for ESD defect localization

Cited by 8 publications

References 7 publications

Frequency determination in nondestructive test of semiconductor devices with ultrasound heating

Frequency determination in nondestructive test of semiconductor devices with ultrasound heating

Ultrasonic beam induced resistance change (SOBIRCH) method for failure analysis of semiconductor devices encapsulated by mold resin

Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

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