Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

Abstract

Optical microscope and FIB were widely used to find out defect locations in display panels. But failure analysis of LTPS TFTs is getting more difficult to detect the locations than that of (a-Si:H) TFTs. We adopted FIB and EMMI tool and found the leakage path on some special function failure such as line defect in display panel. Analysis results would help to find out defects and improve the yield by introducing right analysis method of FIB/EMMI tools in display panels.

Investigation of soft ESD failure on capacitive transimpedance amplifier for hybrid integrated infrared sensor

“…To identify the exact location of the leakage current, we have characterized the CTIA circuit by means of emission microscopy (EMMI) measurements which have been used extensively [27,28,29,30]. The left picture in the Fig.…”

7‐3: High ESD Robustness and Low Visible Light Reflectance Design for LTPS‐TFTs on Glass Substrates in Modular Micro‐LED Displays

“…This structure increases the risk of electrostatic discharge (ESD) because it is exposed to the external environment. ESD protection is also an important issue in the conventional TFT panel structure, and various design and measurement methods have been studied to analyze the ESD defects of the panel and protect the internal circuits [3][4][5][6][7]. Fig.…”