Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve

Srivastava, Viranjay M.; Singh, Ghanshyam; Yadav, K. S.

doi:10.5120/164-289

Cited by 14 publications

(10 citation statements)

References 2 publications

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“…It cannot be employed to determine the equivalent oxide thickness of the high dielectric constant (high-K) materials, proposed for future ULSI CMOS application, because dielectric constants of these materials are different to that of oxide. Furthermore, the thickness of thick oxide can also be derived from the electrical capacitance-voltage (C-V ) data in inversion region or strong accumulation region [43,44]. However, this method cannot be applied directly for thin oxide, because the thickness measured from C-V curve consists of polygate depletion width, oxide thickness, and inversion charge thickness for the inversion state.…”

Section: Computation Of Flat-band and Power Dissipationmentioning

confidence: 99%

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

2011

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In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole fourthrow circuit by using independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation, and better isolation with fast switching speed.

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Section: Computation Of Flat-band and Power Dissipationmentioning

confidence: 99%

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

2011

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“…Since the interface contact resistance is inversely proportional to the total gate area as in term of length and width of a gate. The reduction of resistance should lead to improved RF properties in MOSFETs [5,[23][24][25][26][27][28]. In Figure 10 these diodes are represented by their junction capacitances, C sb and C db .…”

Section: Effective Resistance Of Dp4t Rf Cmos Due To Double-gatementioning

confidence: 99%

“…In the radio transceiver the switches, traditional n-MOS switch has better performance compare to PIN diodes (use of PIN diodes consumes more power), but only for a single operating frequency [1,2]. For multiple operating frequencies, high signal distortions are easily observed, which results in an unrecognizable information signal at the receiver end which would be measured by using the curve of capacitance and voltage with VEE Pro software [3,4]. A continuous scaling of CMOS technology has a better performance of both frequency and noise, where it is becoming a rigorous part for RF applications in the GHz frequency regime of the spectrum.…”

Section: Introductionmentioning

confidence: 99%

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Srivastava¹

2010

WET

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In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless telecommunication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.

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“…We can experiment with program flow and data processing with only LCR meter and VEE programming. VEE provides an Instrument Manager and a Dynamic input/output (I/O) server to simplify the tasks of discovering, configuring, and managing external instruments [8][9][10]. The VEE supports several types of instrument drivers.…”

Section: Introductionmentioning

confidence: 99%

Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch – A Review

Srivastava¹,

Yadav²,

Singh³

2011

WSN

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With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO system, a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured optically. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).

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Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve

Cited by 14 publications

References 2 publications

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch – A Review

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