Large-scale chemical lapping of diamond-sawed silicon wafers to remove residual mechanical damage results in the formation of wafer stains. Highly doped p-type substrates are particularly susceptible and have been a primary cause of low wafer yields during production. This paper describes an investigation into the cause of silicon staining and a practical solution to the problem. On the premise that the stain is a suboxide of silicon, various nitric-hydrofluoric acid mixtures, as well as mixtures of hydrofluoric acid with oxidizing agents such as Cr +6, Fe +~, Cu+2; and I ~ were used to synthesize silicon stains. Ion-scattering spectroscopy (ISS) and secondary ion mass spectrometry (SIMS) analyses established that all of the stains were suboxides of silicon (SiO<2). Their origin is the incomplete oxidation of silicon, Which is determined by the nature of the oxidant and its concentration. Although it is not practical to prevent silicon stains from forming, they can readily be removed by a 15 sec immersion in a 2:1 volume ratio of hydrofluoric acid: 0.038M potassium permanganate solution.