Ar plasma treated ZnON transistor for future thin film electronics

Lee, Eunha; Kim, Sang Woo; Benayad, Anass; Kim, Heegoo; Jeon, Sanghun; Park, Gyeong‐Su

doi:10.1063/1.4930827

Cited by 53 publications

(44 citation statements)

References 44 publications

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“…The ratios of the intensity difference (ΔI = I MAX − I MIN ) to the average intensity for thermally annealed zinc oxynitride and argon plasma−treated zinc oxynitride are 0.48 and 0.21, respectively. Argon plasma is reported to foster the collision cascade of both atoms and ions, contributing to rearrangements toward a homogeneous configuration 49 . This report demonstrated the growth by atomic redistribution with the formation of a homogeneous alloy.…”

Section: Resultsmentioning

confidence: 99%

High mobility and high stability glassy metal-oxynitride materials and devices

Lee

Kim

Benayad

et al. 2016

Sci Rep

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In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

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Section: Resultsmentioning

confidence: 99%

High mobility and high stability glassy metal-oxynitride materials and devices

Lee

Kim

Benayad

et al. 2016

Sci Rep

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“…However, it is claimed that due to the presence of multiple cations of different ionic sizes, the electronic conduction path is hindered, which limits the carrier mobility 29 . As an alternative to multi-cation amorphous metal oxides, a multi-anion approach towards amorphous semiconductors has been proposed and is being investigated experimentally and computationally [29][30][31][32][33][34][35][36] . Amorphous zinc oxynitride (a-ZnON), as a multi-anion amorphous semiconductor, has shown a great promise as a viable replacement of a-IGZO and the electron mobilities (Hall mobilities) exceeding 200 cm 2 /V.s have been experimentally reported 36 .…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Journal of Applied Physics

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Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.arXiv:1812.11333v3 [cond-mat.mtrl-sci]

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“…The incorporation of nitrogen into ZnO leads to the formation of amorphous zinc oxynitride (a‐ZnON) with carrier mobilities of up to

100 {cm}^{2} V^{- 1} s^{- 1}

and an improved stability under illumination, as recently reported in Refs. .…”

Section: Introductionmentioning

confidence: 99%

Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

Reinhardt

Frenzel

Wenckstern

et al. 2016

Physica Status Solidi (a)

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Abstractauthoren We discuss the carrier transport mechanism in amorphous zinc oxynitride (ZnON) thin films fabricated by means of long‐throw magnetron sputtering. ZnON films were radio‐frequency sputtered from a metallic zinc target in a reactive atmosphere consisting of N2, O2, and Ar. The electrical conductivity of the films was controlled via variation of the deposition pressure and substrate temperature. Room temperature deposition yields amorphous, n‐type semiconducting ZnON thin films with a maximum Hall mobility of 25thinmathspacecm2V−1s−1 and carrier concentrations of ∼1018thinmathspacecm−3. The mobility can be further increased up to the 40thinmathspacecm2V−1s−1 range by moderate substrate heating or annealing up to 200∘normalC while maintaining the amorphous phase. From temperature‐dependent Hall effect measurements, we deduced that a percolation conduction model is most likely for the electron transport in the as‐grown ZnON thin films. For annealed samples, a quasi‐metallic behavior is observed.

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Ar plasma treated ZnON transistor for future thin film electronics

Cited by 53 publications

References 44 publications

High mobility and high stability glassy metal-oxynitride materials and devices

High mobility and high stability glassy metal-oxynitride materials and devices

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

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