"Are Electromigration Failures Lognormally Distributed?"

Towner, Janet M.

doi:10.1109/irps.1990.363507

Cited by 12 publications

(4 citation statements)

References 8 publications

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“…The values presented in table 7 allow the determination ofconfidence levels in predicting the time-period in the target life of deposition. The figures presented are a subset from a large number of samples which allows the statistical inference of hypothesis testing on a normal distribution [12].…”

Section: Analysis Of the Gradients And Interceptsmentioning

confidence: 99%

Characterization of VLSI metal conductors using a first-order Joule heating model

Poole¹,

Jones²,

Mejasson³

1995

Semicond. Sci. Technol.

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The electromigration accelerating factors are critically dependent on the absolute temperature of the conductor. This temperature is governed by the ambient background temperature and the temperature rise due to the elevated current. A first-order model of steady state Joule heating within small-geometry VLSI metallizations has been developed. By careful consideration of t h e first-order relationships between conductor resistance, current and temperature it Is possible to extract parameters in order to characterize the metal conductors. A first-order model has been tested against predictions from planar aluminium, 1% silicon (Aljl% Si) structures with a confidence limit of 99%.

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Section: Analysis Of the Gradients And Interceptsmentioning

confidence: 99%

Characterization of VLSI metal conductors using a first-order Joule heating model

Poole¹,

Jones²,

Mejasson³

1995

Semicond. Sci. Technol.

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“…In most literature, the validity of this distribution is assumed, although several researchers have questioned its validity and expended considerable efforts trying to obtain alternative distributions such as the weibull and the multilognormal [5] [6] [7] . Some researche rs have also pointed out that the conventional two parameter lognormal or weibull distributions may not be sufficient, and have provided evidence that three parameter distributions are more appropriate [8] .…”

Section: Introductionmentioning

confidence: 99%

“…There are two data points at the void sizes of about 50% and 80%, in addition to the known boundary conditions of zero probability of failure at defect when the void is non-existent and definite failure at defect in the limiting case of a 100% defect. The mcdel curve in the figure is, Pf(;) (5) where d is the extent of the linewidth, w, taken away by the void. The accuracy of this fit is questionable considering the small number of data points available.…”

Section: Introductionmentioning

confidence: 99%

<title>Subpopulation model for void-related early failure in VLSI interconnects</title>

Menon

Poole

1994

SPIE Proceedings

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A subpopulation model is used to provide a qiantitative measure of the early failures inVLSI interconnects resulting from the presence of defects. Defects are attributed to processing flaws caused by particulates, improper etching, saturated stress voids or similar causes. The model includes the effect of defect severity, grain size distribution and linewidth. To validate the model, life-tests were conducted using Aluminum alloy interconnect test structures with and without a TiW barrier underlayer. Test strucWres included interconnects which contained lithographically introduced subtractive defects of various seventies. The model and the supporting data shows that greater voids in smaller grained and wider lines cause early failure with

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“…13 The importance of different stressing conditions has also been identified. In the last several years, there have been hundreds of papers written on this subject.…”

Section: Introduchonmentioning

confidence: 99%

<title>Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs</title>

Snyder¹,

Kapoor²,

Anderson³

1993

SPIE Proceedings

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tSignetics Co., MIS 20, 9201 Pan American Fwy., Albuquerque, NM 87113 ABSTRMT A unique statistical approach to hot-carrier lifetime estimates is proposed. Unlike previous work, this approach emphasizes the inherent variability in IC processing. As a result, log-normal distributions of hot-carrier lifetimes in micron and submicron n-channel MOS transistors are presented for the first time. It is also shown that the variation in these distributions can be independent of stress voltage. Therefore, accelerated voltage tests can be used to quickly gather statistical data. Without this statistical information, conventional lifetime techniques significantly overestimate the hot-carrier lifetime.

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"Are Electromigration Failures Lognormally Distributed?"

Cited by 12 publications

References 8 publications

Characterization of VLSI metal conductors using a first-order Joule heating model

Characterization of VLSI metal conductors using a first-order Joule heating model

<title>Subpopulation model for void-related early failure in VLSI interconnects</title>

<title>Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs</title>

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