2011 3rd International Conference on Electronics Computer Technology 2011
DOI: 10.1109/icectech.2011.5941742
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AREA optimized low power arithmetic and logic unit

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Cited by 27 publications
(10 citation statements)
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“…Table 4 summarizes the performance comparison of M3DIC-JLFETs and M3DIC-MOSFETs. M3DICs such as the INV, NAND, NOR, 2 × 1 multiplexer (MUX) [ 29 ], D flip-flop (D-FF) [ 30 ], and 6T SRAM [ 31 ] were simulated. Their performances were compared in terms of their average static power, average dynamic power, and average delay.…”
Section: Circuit Simulation and Discussionmentioning
confidence: 99%
“…Table 4 summarizes the performance comparison of M3DIC-JLFETs and M3DIC-MOSFETs. M3DICs such as the INV, NAND, NOR, 2 × 1 multiplexer (MUX) [ 29 ], D flip-flop (D-FF) [ 30 ], and 6T SRAM [ 31 ] were simulated. Their performances were compared in terms of their average static power, average dynamic power, and average delay.…”
Section: Circuit Simulation and Discussionmentioning
confidence: 99%
“…Power diminishing could be achieved at Module Level or at circuit level or at architecture level [2]. In simple switch procedure select info rationale as control rationale and permits additional info signal from gate terminal [3].…”
Section: Previous Workmentioning
confidence: 99%
“…Various sorts of FA planning in place of limiting force are, for example, Hybrid Full Adder (H-FA) and 10 Transistor reduced power Full Adder (10T-FA) and 11 transistor FA (11T-FA) etc. FA works in mode of ultra-low through utilization of subthreshold current then expends low power [2], [3]. Full Adder is manufactured utilizing near to the ground power XOR gate and 2:1 multiplexer.…”
Section: Previous Workmentioning
confidence: 99%
“…The region just below V t of a transistor is called the sub-threshold region [4]. After the gate to source voltage V gs is less than threshold Voltage V t , then the leakage current This indicates that the parameters µ, K, q are constants and only V t and W are dependent on I leakage .…”
Section: A High V T Cell Conceptmentioning
confidence: 99%