Arrayed waveguide grating of 70×60 µm ² size based on Si photonic wire waveguides

Abstract

A miniature arrayed waveguide grating of 70 Â 60 mm 2 size consisting of Si photonic wire waveguides was designed using complete modelling in the finite-difference time-domain simulation. The device was fabricated onto a silicon-on-insulator substrate and evaluated in the wavelength range around 1.55 mm. The clear demultiplexing characteristics were observed with a channel spacing of 11 nm and a loss of less than 1 dB.

Silicon Nanowire Waveguides and Their Applications in Planar Wavelength Division Multiplexers/Demultiplexers

“…The excess loss due to the inserted microbends in the arrayed waveguides is very small when the bending radius is large enough. Figure 15 shows a SEM picture of a fabricated AWG chip with only 70X60 μm 2 size (Sasaki et al, 2005). The clear Gaussian spectrum is obtained with a channel spacing of 11 nm, a loss of less than 1 dB, adjacent channel crosstalk of ~13 dB, and an oscillation by the Fabry-Perot resonance of 0.9 dB.…”

Silicon-based on-chip multiplexing technologies and devices for Peta-bit optical interconnects

“…Alternatively, multi-beam interference is preferred because it enables narrow-passband wavelength filtering over a large wavelength period (i.e., the free spectral range, FSR). The typical multi-beam interferometers include arrayed-waveguide gratings (AWGs) [17][18][19][20][21][22][23][24][25][26][27][28][29] and echelle diffraction gratings (EDG) [30][31][32][33][34], which can (de)multiplex tens of WDM channels simultaneously and have been used in practical DWDM systems worldwide. In Section 2.1, we give a review for recent progresses on these two types of planar waveguide (de)multiplexers (i.e., AWGs as well as EDGs) with ultrasmall footprints based on silicon-on-insulator (SOI) nanowires.…”

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

“…For the design of a lowloss taper, one usually makes the taper long enough to be adiabatic so that higher-order modes are not excited [41][42][43][44]. This design rule usually works well especially for low index-contrast (∆) optical waveguides (e.g., SiO 2 -on-Si buried optical waveguides).…”