As-doped SnO2 thin films for use as large area position sensitive photodetector

Zhelev, V.; Petkov, P.; Shindov, P.; Bineva, I.; Васильев, С. Г.; Ilcheva, V.; Petkova, T.

doi:10.1016/j.tsf.2018.03.009

Cited by 13 publications

(6 citation statements)

References 21 publications

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“…Compared with crystalline films, amorphous films are less likely to form gaps and voids due to the absence of grain boundaries. Moreover, amorphous oxides have a surface that is typically smoother than polycrystalline films, as the random orientation and larger size of the grains. − As shown in the AFM image (see Figure S2b), the root-mean-square (RMS) surface roughness of the ZTO film is 3.0 nm. Despite being in the amorphous phase, it is noted that the ZTO film is not as smooth as expected compared with other reports .…”

Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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For traditional wide-bandgap semiconductor materials, a high-temperature process is unavoidable for improving crystallization quality, so the substrate of the device is greatly limited. In this work, zinc–tin oxide (a-ZTO) amorphous oxide processed by the pulsed laser deposition method was utilized as the n-type layer, which exhibits considerable electron mobility and optical transparency, and can be deposited at room temperature. At the same time, by combining p-type CuI grown by the thermal evaporation method, a vertically structured ultraviolet photodetector based on CuI/ZTO heterojunction was obtained. The detector demonstrates self-powered properties, with an on–off ratio exceeding 104, and rapid response with a rise time of 2.36 ms and a fall time of 1.49 ms. Also, the photodetector shows long-term stability with 92% retention after 5000 s cyclic lighting and maintains reproducible response in frequency dependence measurement. Furthermore, the flexible photodetector on poly(ethylene terephthalate) (PET) substrates was constructed, exhibiting fast response and durability in the bending state. This is the first time that the heterostructure based on CuI has been applied in the flexible photodetector. The excellent results indicate that the combination of amorphous oxide and CuI has the potential for ultraviolet photodetectors, and will broaden the application range of high-performance flexible/transparent optoelectronic devices in the future.

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Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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“…It is speculated that excessive doping may cause copper ions to coat the crystal surface and fill the interior of the crystal lattice, which weakens the repulsive forces between crystal grains and results in agglomeration and enlargement of the particles. 52,53 As shown in Figure 8, the EDX analysis proved the existence and uniform distribution of titanium, tin, copper, and oxide in the nanosheets.…”

Section: Resultsmentioning

confidence: 99%

“…With the increasing Cu doping ratio, the distribution of Cu-doped SnO 2 clusters becomes more compact and relatively rough, and the surface is in an irregular and poorly dispersed accumulation. It is speculated that excessive doping may cause copper ions to coat the crystal surface and fill the interior of the crystal lattice, which weakens the repulsive forces between crystal grains and results in agglomeration and enlargement of the particles. , …”

Section: Resultsmentioning

confidence: 99%

Insight into Copper Doping Ratio on Optoelectronics Performance of Two-Dimensional Cu-Doped SnO₂ Nanosheets: an Experiment and DFT Study

Nie

Han

Yang

et al. 2023

ACS Appl. Electron. Mater.

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The optoelectronics performances of two-dimensional Cu-doped SnO2 nanosheets were investigated by first-principles calculations on the basis of density functional theory (DFT) and experiments. First, the crystal structures of Cu-doped SnO2 were built and analyzed by using DFT within the generalized gradient approximation (GGA). The total energy of Cu-doped SnO2 was discussed qualitatively and quantitatively from three aspects: charge density, band structure, and state density. The results show that copper doping has little effect on the charge density distribution because of the similar ionic radius of Cu2+, Sn4+, and the close bond lengths of Cu–O and Sn–O. The calculation results of band structure and state density show that the doping of a copper acceptor leads to the appearance of a new energy level at the top of the valence band and decreases the band gap of SnO2. With the guidance of theoretical calculation, the nanosheets of Cu-doped SnO2 are constructed experimentally, and their optoelectronics performances are investigated. The experimental results exhibit that the Cu atom replaces the Sn atom in the SnO2 lattice, while the Cu-doped SnO2 retains the original rutile phase of the intrinsic SnO2. The sample with a doping ratio of 12.5% has more uniform particle morphology and dispersion characteristics. In addition, the 12.5% Cu-doped SnO2 obtained the largest transient photocurrent of 3 μA/cm2 and the lowest resistance to charge transfer, thereby indicating that the material has a remarkably higher optoelectronics performance under this ratio. The theoretical calculation and experimental results are consistent, which indicates that Cu doping effectively enhances the charge transfer in SnO2 and enables it for high-quality application in optoelectronic catalysis.

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“…Moreover, Al-doped SnO 2 thin films can be obtained easily using this technique, which makes them very attractive in many applications such as gas sensors [34] and solar cells [35] . The thin films photoconductivity properties based on pure and doped SnO 2 have been studied by a number of research such as Sb-doped SnO 2 [36] , As-doped SnO 2 [37] , Aldoped SnO 2 [38] , and the effect of twin boundaries on photocurrent decay of the pure SnO 2 [39] . However, the studies about the UV photoconductivity and photosensitivity in Al-doped SnO 2 thin films prepared by sol-gel dip coating are not enough.…”

Section: Introductionmentioning

confidence: 99%

Investigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method

Selma¹,

Salima²,

Seddik³

et al. 2023

J. Semicond.

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Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics, I ON/I OFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.

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As-doped SnO2 thin films for use as large area position sensitive photodetector

Cited by 13 publications

References 21 publications

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Insight into Copper Doping Ratio on Optoelectronics Performance of Two-Dimensional Cu-Doped SnO₂ Nanosheets: an Experiment and DFT Study

Investigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method

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As-doped SnO2 thin films for use as large area position sensitive photodetector

Cited by 13 publications

References 21 publications

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Insight into Copper Doping Ratio on Optoelectronics Performance of Two-Dimensional Cu-Doped SnO2 Nanosheets: an Experiment and DFT Study

Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method

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Product

Resources

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Insight into Copper Doping Ratio on Optoelectronics Performance of Two-Dimensional Cu-Doped SnO₂ Nanosheets: an Experiment and DFT Study

Investigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method