As-soak control of the InAs-on-GaSb interface

Kaspi, R.; Steinshnider, J.; Weimer, Michael; Moeller, C. E.; Ongstad, Andrew P.

doi:10.1016/s0022-0248(01)00950-2

Cited by 47 publications

(24 citation statements)

References 16 publications

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“…However, two types of interface can be epitaxied along the [0 0 1] growth direction because the InAs/GaSb heterojunction has no common element: an In/As/Ga/Sb sequence (''GaAs-like'' interface), or an As/In/Sb/Ga sequence (''InSb-like'' interface). Without a specifical shutter sequence, the InAs-on-GaSb interface is naturally ''InSb-like'' while the GaSb-on-InAs interface is ''GaAs-like'' and SLs with ''InSb-like'' interfaces have been found to have greater structural and luminescence properties [23][24][25][26][27][28]. Consequently, the InSb layer is inserted just after the InAs layer to eliminate ''GaAs-bonds'' and to promote strain compensation.…”

Section: Methodsmentioning

confidence: 99%

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Rodriguez

Christol

Cerutti

et al. 2005

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Rodriguez

Christol

Cerutti

et al. 2005

Journal of Crystal Growth

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“…Techniques for characterizing superlattices include Xray Diffraction (XRD), [30][31][32][33][34] (scanning) transmission electron microscopy ((S)TEM), 28,35,36 scanning tunneling microscopy (STM), 34,37,38 and atom probe tomography (APT). 28,39,40 High-resolution XRD (HRXRD) has its own distinct advantages as a non-destructive characterization method, which can provide a global structural assessment of the superlattices.…”

Section: Introductionmentioning

confidence: 99%

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Meng

Kim

Rouvière

et al. 2014

Journal of Applied Physics

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We propose a digital model for high quality superlattices by including fluctuations in the superlattice periods. The composition and strain profiles are assumed to be coherent and persist throughout the superlattice. Using this model, we have significantly improved the fit with experimental X-ray diffraction data recorded from the nominal InAs/GaSb superlattice. The lattice spacing of individual layers inside the superlattice and the extent of interfacial intermixing are refined by including both (002) and (004) and their satellite peaks in the fitting. For the InAs/GaSb strained layer superlattice, results show: (i) the GaSb-on-InAs interface is chemically sharper than the InAs-on-GaSb interface, (ii) the GaSb layers experience compressive strain with In incorporation, (iii) there are interfacial strain associated with InSb-like bonds in GaSb and GaAs-like bonds in InAs, (iv) Sb substitutes a significant amount of In inside InAs layer near the InAs-on-GaSb interface. For support, we show that the composition profiles determined by X-ray diffraction are in good agreement with those obtained from atom probe tomography measurement. Comparison with the kinetic growth model shows a good agreement in terms of the composition profiles of anions, while the kinetic model underestimates the intermixing of cations. V C 2014 AIP Publishing LLC.

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“…Our theoretical calculations suggest that T 1 in the ͑110͒ superlattice under study here may be limited by compositional mixing at the interfaces, indicating that further improvements in the spin lifetime may be achievable through control and optimization of interface characteristics using targeted growth methods. [17][18][19][20][21] The InAs/GaSb superlattices were grown by molecular beam epitaxy on n-type ͓1 -2ϫ10 16 cm Ϫ3 ͔ ͑001͒ or ͑110͒oriented InAs substrates ͓(ϩ/Ϫ) 0.1 degree͔ in a Fisons VG-80 machine equipped with shuttered EPI group-III evaporators and shuttered EPI valved group-V cracker cells. The superlattice structures contain 2.1 nm thick InAs layers and 3.7-nm thick GaSb layers, with a total of 85 periods.…”

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confidence: 99%

Spin relaxation in (110) and (001) InAs/GaSb superlattices

et al. 2003

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We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond PPLN OPO. Longer T1 times in (110) superlattices are attributed to the suppression of the native interface asymmetry and bulk inversion asymmetry contributions to the precessional D'yakonov Perel spin relaxation process. Calculations using a nonperturbative 14-band nanostructure model give good agreement with experiment and indicate that possible structural inversion asymmetry contributions to T1 associated with compositional mixing at the superlattice interfaces may limit the observed spin lifetime in (110) superlattices. Our findings have implications for potential spintronics applications using InAs/GaSb heterostructures.Comment: 4 pages, 2 figure

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As-soak control of the InAs-on-GaSb interface

Cited by 47 publications

References 16 publications

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Spin relaxation in (110) and (001) InAs/GaSb superlattices

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