Spin relaxation in (110) and (001) InAs/GaSb superlattices

Hall, K. C.; Gündoğdu, Kenan; Altunkaya, E.; Lau, Wayne H.; Flatté, Michael E.; Boggess, Thomas F.; Zinck, J. J.; Barvosa-Carter, William; Skeith, Sky L.

doi:10.1103/physrevb.68.115311

Cited by 58 publications

(52 citation statements)

References 35 publications

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“…31,32 This property has enabled a number of advances in spintronics to be made using (110) quantum wells, including gate-control of relaxation time, 33 low-voltage spin manipulation, 34 spin-injected light emitting diodes, 35 and spin-injected lasers. 36 For spintronic applications, smooth interfaces are essential for maximizing spinlifetimes, 33,37 but III-V materials grown on (110) surfaces are often rough.…”

Section: Spintronicsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: Spintronicsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…29,33,34 Recently, some attention has been devoted to (111) QWs where electron spin relaxation also shows rich properties. [36][37][38][39][40] Cartoixà et al 36 pointed out that to the first order in the momentum, the effective magnetic field from both the Dresselhaus and Rashba terms Ω 1 = (α D +α R )(k y , −k x , 0) (with z [111], x [112] and y [110]), can be suppressed to zero by setting the Rashba coefficient α R to cancel with the Dresselhaus coefficient α D and hence the DP spin relaxation becomes absent for all three spin components.…”

Section: Introductionmentioning

confidence: 99%

“…11, 14,15,[18][19][20][21][22][24][25][26][27]29,33,34 In (001) QWs, when the strengths of the Dresselhaus and Rashba terms are comparable, electron spin relaxation along the [110] or [110] direction can be strongly suppressed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hole spin relaxation inp-type (111) GaAs quantum wells

Wang¹,

Wu²

2012

Phys. Rev. B

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Hole spin relaxation in p-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The subband Löwdin perturbation method is applied to obtain the effective Hamiltonian including the Dresselhaus and Rashba spin-orbit couplings. Under a proper gate voltage, the total in-plane effective magnetic field in (111) GaAs/AlAs quantum wells can be strongly suppressed in the whole momentum space, while the one in (111) GaAs/InP quantum wells can be suppressed only on a special momentum circle. The hole spin relaxation due to the D'yakonov-Perel' and Elliott-Yafet mechanisms is calculated by means of the fully microscopic kinetic spin Bloch equation approach with all the relevant scatterings explicitly included. For (111) GaAs/AlAs quantum wells, extremely long heavy-hole spin relaxation time (upto hundreds of nanoseconds) is predicted. In addition, we predict a pronounced peak in the gate-voltage dependence of the heavy-hole spin relaxation time due to the D'yakonov-Perel' mechanism. This peak origins from the suppression of the unique inhomogeneous broadening in (111) GaAs/AlAs quantum wells. Moreover, the Elliott-Yafet mechanism influences the spin relaxation only around the peak area due to the small spin mixing between the heavy and light holes in quantum wells with small well width. We also show the anisotropy of the spin relaxation. In (111) GaAs/InP quantum wells, a mild peak, similar to the case for electrons in (111) GaAs quantum wells, is also predicted in the gate-voltage dependence of the light-hole spin relaxation time. The contribution of the Elliott-Yafet mechanism is always negligible in this case.

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“…5 Several groups probed the spin life time in InAs using pump/probe spectroscopy, finding a spin life time of 24 6 2 ps for nearly degenerate epitaxial layers of n-type InAs 6 and $1964 ps for intrinsic material. 7 Hall et al 8 studied spin relaxation in (110) and (001) InAs/GaSb heterostructures and a spin lifetime of 18 ps was reported for (110) superlattices, much longer than that of the (001) structure with a life time of 700 fs. The large enhancement has been explained by the suppression of decay associated with asymmetry in interface bonding and bulk inversion asymmetry (BIA) contributions to the spin decay process in (110) superlattices.…”

mentioning

confidence: 99%