ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure

Autran, Jean‐Luc; Munteanu, Daniéla; Moindjie, Soilihi; Saoud, T. Saad; Sauze, S.; Gasiot, Gilles; Roché, Philippe

doi:10.1016/j.microrel.2015.06.101

Cited by 8 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this study, altitude (on the ASTEP platform [9][10]), underground (at LSM, Modane [11][12]) and sea level (at IM2NP laboratory, Marseille) real-time soft error rate (SER) measurements on bulk 65nm SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. This approach has been applied for estimating the event rates induced by atmospheric neutrons and alpha-particle emitters as a function of event multiplicity.…”

Section: Introductionmentioning

confidence: 99%

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Moindjie

Autran

Munteanu

et al. 2017

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65nm and 40nm SRAMs.

show abstract

Section: Introductionmentioning

confidence: 99%

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Moindjie

Autran

Munteanu

et al. 2017

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

show abstract

“…AF is defined by the relative particle flux (total integral flux above a certain energy, generally 1 MeV) at the test location with respect to the reference value of the same quantity evaluated at sea level (New York City) [23]. For ASTEP, AF ≈ 6 [29] for the atmospheric neutron flux integrated above 1 MeV; this value is higher for atmospheric protons (AF ≈ 8) and lower for muons (AF ≈ 2) since the dependence with altitude of the integrated flux is different for these particles [30]. h -1 for ASTEP.…”

Section: Resultsmentioning

confidence: 99%

Natural radiation events in CCD imagers at ground level

Saoud

Moindjie

Munteanu

et al. 2016

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

International audienceIn Charged Coupled Devices (CCDs), radiation-induced events generate electron hole pairs in silicon that cause artifacts and contribute to degrade image quality. In this work, the impact of natural radiation at ground level has been characterized at sea level, in altitude and underground for a commercial full-frame CCD device. Results have been carefully analyzed in terms of event shape, size and hourly rates. The respective contributions of atmospheric radiation and telluric contamination from ultra-traces of alpha-particle emitters have been successfully separated and quantified. Experimental results have been compared with simulation results obtained from a dedicated radiation transport and interaction code. Highlights: • Image artifacts induced by natural radiation in CCD images are investigated • Radiation-induced events are analyzed in terms of pixel size and hourly rates • Numerical simulations give the contributions of the different particles to the event rate

show abstract

“…The RT-SER experiments reported in this work have been successively performed using the same RT-SER setup in two test locations: at mountain altitude (+2555 m) on the Altitude Single event effect Test European Platform (ASTEP, Plateau de Bure, Dévoluy mountains, France [18],) and at sea level on the TERrestrial Radiation environment characterization platform of Aix-Marseille University (TERRAMU, Campus of Saint-Jérôme, Marseille, France). These two experimental platforms have been created in 2005 and 2013, respectively, and are currently operated by IM2NP Laboratory (Aix-Marseille University, CNRS and University of Toulon, France).…”

Section: Test Platformsmentioning

confidence: 99%

Real-time soft error rate measurements on bulk 40 nm SRAM memories: a five-year dual-site experiment

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper reports five years of real-time soft error rate experimentation conducted with the same setup at mountain altitude for three years and then at sea level for two years. More than 7 Gbit of SRAM memories manufactured in CMOS bulk 40 nm technology have been subjected to the natural radiation background. The intensity of the atmospheric neutron flux has been continuously measured on site during these experiments using dedicated neutron monitors. As the result, the neutron and alpha component of the soft error rate (SER) have been very accurately extracted from these measurements, refining the first SER estimations performed in 2012 for this SRAM technology. Data obtained at sea level evidence, for the first time, a possible correlation between the neutron flux changes induced by the daily atmospheric pressure variations and the measured SER. Finally, all of the experimental data are compared with results obtained from accelerated tests and numerical simulation.

show abstract

ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure

Cited by 8 publications

References 11 publications

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Natural radiation events in CCD imagers at ground level

Real-time soft error rate measurements on bulk 40 nm SRAM memories: a five-year dual-site experiment

Contact Info

Product

Resources

About