Atmospheric and low pressure metalorganic vapor phase epitaxial growth of vertical quantum wells and quantum well wires on submicron gratings

Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

“…However, there is a clear non-uniformity in the overall thickness, with enhanced growth at the interface of the top (100) plane and the sidewall, and rapid extension of the top (100) surface. This effect is consistent with that seen in the regrowth of V-grooves at lower temperatures and large V/III ratios 21 , in which the limited mobility of the group III-species prevents them from diffusing along {111} planes. It is this "bunching" of Al drives the lateral growth of the (100) planes that results in void encapsulation, confirming the importance of suppressed Al mobility during the regrowth process.…”

“…It is known that Al has inherently lower mobility compared to GaAs or AlGaAs 20 , and lower rates on more open, higher Miller index surfaces is expected. The limited surface mobility is further suppressed by the use of a relatively low growth temperature and large V/III ratio, which have been shown to impede the diffusion of group-III species across similarly patterned substrates 21 .…”

Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates

“…For example, quantum dots [28,29], which results from exploring the Stranski-Krastonow growth mode, are features bounded by {113} type facets. Compositional gradients [30][31][32] might be used in order to laterally define a structure by doping levels which can be appreciably higher [33,34] than is ordinarily achieved on lower indexed faces. These structures might also be used to explore the segregation of various doping species in co-doped samples [25,35] or examine the amphoteric [36] character of Si in defining lateral p-n junctions.…”

Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layer

“…Selective area growth by metalorganic chemical vapor deposition ͑MOCVD͒ on the nonplanar substrate is a very effective method for the fabrication of high quality QWR or QD structures. 3,4 Due to the different diffusion characteristics of Al and Ga species, a composition nonuniformity in the AlGaAs barrier could be expected. For example, when we grow AlGaAs on V-grooved substrates aligned along ͓011͔ direction, the Al composition on the ͑111͒A sidewall is generally slightly higher than that on the ͑001͒ flat region because the Ga species can migrate more rapidly than the Al species from the ͑111͒A sidewall to the ͑001͒ flat region.…”