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Highbrightness lightemitting diodes grown by molecular beam epitaxy on ZnSe substratesHigh-brightness blue and green light-emitting diodes ͑LEDs͒ based on II-VI double heterostructures ͑DHs͒ have been successfully grown by molecular-beam epitaxy ͑MBE͒ on ͑100͒ ZnSe substrates. These LED structures consist of a 500-1000 Å thick active region of undoped blue-emitting Zn 0.9 Cd 0.1 Se/ZnSe multiple quantum wells or a green-emitting ZnTe 0.1 Se 0.9 single quantum well sandwiched between a 2-3 m thick n-type ZnSe:Cl layer and a ϳ1 m thick p-type ZnSe:N layer. Operated at 10 mA ͑3.0 V͒, the blue LEDs produce 327 W of light output sharply peaked at 489 nm, corresponding to an external quantum efficiency of 1.3%. The green LEDs generate 1.3 mW of light peaked at 512 nm with a corresponding external quantum efficiency of 5.3%. In terms of photometric units, the luminous efficiencies for these II-VI blue and green LEDs are 1.7 and 18.0 lm/W, respectively.

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