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We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300nm and 1550nm. They contain 3 InGaAsP quantum wells sandwiched in a h cavity defined by an InPhGaAsP distributed bragg reflector and a 200nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.

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