High quality InGaAs/AlGaAs lasers grown on Ge substrates

Self-assembled In(Ga) As islands on Ge substrate

“…This makes germanium the desired substrate material for solar cells [3][4][5]. Ge has also been used in other electro-optic applications, such as LEDs [6] and laser diodes [7]. A common problem in these structures is the GaAs/Ge interface.…”

“…Another problem is the diffusion of Ga and As into the Ge substrate, [9] both of which act as dopant atoms in germanium. Various buffer layers have been shown to enhance the quality of GaAs grown on a Ge substrate [7,10]. Self-assembled islands can be used to improve the buffer layer.…”

The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge

“…GaAs/Ge heterostructures have received considerable attention for space power application [1][2][3][4][5][6] and recently for light-emitting diodes and laser diodes, 7,8 as the lattice constant and thermal expansion coefficient of GaAs and Ge are nearly matched. The GaAs/Ge material system has many advantages over GaAs/GaAs.…”

Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells

“…7) Ge substrates also offer more robust structure at lower cost than GaAs. On Ge substrates laser diodes below 1 mm wavelength based on InGaAs/GaAs QWs have already been reported by D'Hondt et al 8) However, to our knowledge no results concerning GaInNAs QWs on Ge substrates have been published. In this study we report wavelength extension using dilute nitrides on Ge substrates and compare the growth of InGaAs and GaInNAs QWs on Ge and GaAs substrates.…”